A comprehensive model for PMOS NBTI degradation: Recent progress
Negative bias temperature instability (NBTI) is a well-known reliability concern for PMOS
transistors. We review the literature to find seven key experimental features of NBTI …
transistors. We review the literature to find seven key experimental features of NBTI …
Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence
W Goes, Y Wimmer, AM El-Sayed, G Rzepa… - Microelectronics …, 2018 - Elsevier
It is well-established that oxide defects adversely affect functionality and reliability of a wide
range of microelectronic devices. In semiconductor-insulator systems, insulator defects can …
range of microelectronic devices. In semiconductor-insulator systems, insulator defects can …
A comparative study of different physics-based NBTI models
Different physics-based negative bias temperature instability (NBTI) models as proposed in
the literature are reviewed, and the predictive capability of these models is benchmarked …
the literature are reviewed, and the predictive capability of these models is benchmarked …
BTI analysis tool—Modeling of NBTI DC, AC stress and recovery time kinetics, nitrogen impact, and EOL estimation
A comprehensive modeling framework is presented to predict the time kinetics of negative
bias temperature instability stress and recovery during and after dc and ac stresses and also …
bias temperature instability stress and recovery during and after dc and ac stresses and also …
Compact modeling of total ionizing dose and aging effects in MOS technologies
IS Esqueda, HJ Barnaby… - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
This paper presents a physics-based compact modeling approach that incorporates the
impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide …
impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide …
On the physical mechanism of NBTI in silicon oxynitride p-MOSFETs: Can differences in insulator processing conditions resolve the interface trap generation versus …
Negative bias temperature instability (NBTI) is studied in plasma (PNO) and thermal (TNO)
Si-oxynitride devices having varying EOT. Threshold voltage shift (DeltaV T) and its field (E …
Si-oxynitride devices having varying EOT. Threshold voltage shift (DeltaV T) and its field (E …
A review of NBTI mechanisms and models
S Mahapatra, N Parihar - Microelectronics Reliability, 2018 - Elsevier
A comprehensive review is done of different NBTI mechanisms and models proposed in the
literature over the past years. The Reaction-Diffusion (RD) model based comprehensive …
literature over the past years. The Reaction-Diffusion (RD) model based comprehensive …
Atomic-scale defects involved in the negative-bias temperature instability
JP Campbell, PM Lenahan… - … on Device and …, 2007 - ieeexplore.ieee.org
This paper examines the atomic-scale defects involved in a metal-oxide-silicon field-effect-
transistor reliability problem called the negative-bias temperature instability (NBTI). NBTI has …
transistor reliability problem called the negative-bias temperature instability (NBTI). NBTI has …
Ultrafast measurements and physical modeling of NBTI stress and recovery in RMG FinFETs under diverse DC–AC experimental conditions
Threshold voltage shift (ΔV T) due to negativebias temperature instability (NBTI) in p-
FinFETs with replacement metal gate-based high-k metal gate process is measured using …
FinFETs with replacement metal gate-based high-k metal gate process is measured using …
A 3-D TCAD framework for NBTI—Part I: Implementation details and FinFET channel material impact
The time kinetics of interface trap generation and passivation (ΔN IT) and its contribution (ΔV
IT) during and after negative bias temperature instability (NBTI) stress is calculated by using …
IT) during and after negative bias temperature instability (NBTI) stress is calculated by using …