An architectural-level reliability improvement scheme in STT-MRAM main memory
DRAM technologies in main memory of computer systems face fundamental scalability
challenges beyond 10 nm node. In recent years, Spin-Transfer Torque Magnetic Random …
challenges beyond 10 nm node. In recent years, Spin-Transfer Torque Magnetic Random …
An Improved Model for Metal Oxide-Based Memristors and Application in Memory Crossbars
V Mladenov, S Kirilov - 2022 18th International Conference on …, 2022 - ieeexplore.ieee.org
Owing to their valuable properties, memristors are applicable in neural networks, memory
crossbars, analog and digital programmable devices and others, and their design require …
crossbars, analog and digital programmable devices and others, and their design require …
Stochastic Aware Modeling of Voltage Controlled Magnetic Anisotropy MRAM
This paper presents a physics-based compact model for Voltage-Controlled Magnetic
Anisotropy (VCMA) MRAM, calibrated against fabricated devices. Our model addresses …
Anisotropy (VCMA) MRAM, calibrated against fabricated devices. Our model addresses …
A Multiphysical Field Dynamic Behavioral Model of Perpendicular STT‐MTJ
W Jianyu, Z Yifei, Z Hongli - IET Circuits, Devices & Systems, 2024 - Wiley Online Library
The spin transfer tunnel magnetic tunnel junction (STT‐MTJ) has been widely used in
computers, memory, and other fields because of its nonvolatility, low power consumption …
computers, memory, and other fields because of its nonvolatility, low power consumption …
A General-Purpose STT-MTJ Device Model Based on Fokker-Planck Equation
A thermally agitated device model of spin-transfer torque magnetic tunnel junction (STT-
MTJ) based on the Fokker-Planck equation is proposed which is implemented into HSPICE …
MTJ) based on the Fokker-Planck equation is proposed which is implemented into HSPICE …
A fokker-planck solver to model mtj stochasticity
F García-Redondo, P Prabhat… - ESSDERC 2021-IEEE …, 2021 - ieeexplore.ieee.org
Magnetic Tunnel Junctions (MTJs) constitute the novel memory element in STT-MRAM,
which is ramping to production at major foundries as an eFlash replacement. MTJ switching …
which is ramping to production at major foundries as an eFlash replacement. MTJ switching …
Predicted Modeling of Hybrid Spintronic-electronic Devices Based on the Verilog-A Compact Model of Magnetic Heterostructure
MD Lobkova, PN Skirdkov, GA Kichin… - 2024 Conference of …, 2024 - ieeexplore.ieee.org
Applied interest to spintronics devices based on magnetic tunnel junction (MTJ) is motivated
mainly by low power consumption and high density. To co-design hybrid spintronic …
mainly by low power consumption and high density. To co-design hybrid spintronic …
MODELLING AND SIMULATING VOLTAGE CONTROLLED MAGNETIC ANISOTROPY MAGNETIC MEMORY DEVICES
W Zhu - 2022 - ideals.illinois.edu
Magnetoresistive random access memory (MRAM) devices offer non-volatile memory
storage due to them storing bits with magnetic spin instead of with electrical charge …
storage due to them storing bits with magnetic spin instead of with electrical charge …