Foundations of optical diagnostics in low-temperature plasmas

R Engeln, B Klarenaar, O Guaitella - Plasma Sources Science …, 2020 - iopscience.iop.org
Over the past few decades many diagnostics have been developed to study the non-
equilibrium nature of plasma. These developments have given experimentalists the …

N2 dissociation and kinetics of N (4S) atoms in nitrogen DC glow discharge

AV Volynets, DV Lopaev, TV Rakhimova… - Journal of Physics D …, 2018 - iopscience.iop.org
N 2 dissociation in pure nitrogen plasma has a long history of research. It seems to be a
complex process which comprises many reactions involving various electronic and …

On mechanisms influencing etching/polymerization balance in multi-component fluorocarbon gas mixtures

A Efremov, HJ Son, G Choi, KH Kwon - Vacuum, 2022 - Elsevier
In this work, we performed both experimental and model-based study of plasma parameters,
steady-state gas phase compositions and heterogeneous process kinetics in CF 4+ C 4 F 8+ …

Oxygen (3P) atom recombination on a Pyrex surface in an O2 plasma

JP Booth, O Guaitella, A Chatterjee… - Plasma Sources …, 2019 - iopscience.iop.org
The recombination of O (3 P) atoms on the surface of a Pyrex tube containing a DC glow
discharge in pure O 2 was studied over a wide range of pressure (0.2–10 Torr) and …

On Relationships between Plasma Chemistry and Surface Reaction Kinetics Providing the Etching of Silicon in CF4, CHF3, and C4F8 Gases Mixed with Oxygen

SY Baek, A Efremov, A Bobylev, G Choi, KH Kwon - Materials, 2023 - mdpi.com
In this work, we discuss the effects of component ratios on plasma characteristics, chemistry
of active species, and silicon etching kinetics in CF4+ O2, CHF3+ O2, and C4F8+ O2 gas …

Development of Virtual Metrology Using Plasma Information Variables to Predict Si Etch Profile Processed by SF6/O2/Ar Capacitively Coupled Plasma

JW Kwon, S Ryu, J Park, H Lee, Y Jang, S Park… - Materials, 2021 - mdpi.com
In the semiconductor etch process, as the critical dimension (CD) decreases and the
difficulty of the process control increases, in-situ and real-time etch profile monitoring …

Multifold study of volume plasma chemistry in Ar/CF4 and Ar/CHF3 CCP discharges

OV Proshina, TV Rakhimova, AI Zotovich… - Plasma Sources …, 2017 - iopscience.iop.org
Low-pressure RF plasma in fluorohydrocarbon gas mixtures is widely used in modern
microelectronics, eg in the etching of materials with a low dielectric constant (low-k) …

Spectral methods of control of impurities, their flows and localization in an equilibrium low-temperature plasma of low pressure

AV Bernatskiy, IV Kochetov, VN Ochkin - Plasma physics reports, 2020 - Springer
The state-of-art of studies of processes involving small fractions of particles formed as a
result of chemical transformations of the source gas or appearing from the outside as an …

White paper on the future of plasma science for optics and glass

M Šimek, M Černák, O Kylián, R Foest… - Plasma Processes …, 2019 - Wiley Online Library
This paper reflects on the future of low‐temperature plasma science in relation to the
manufacturing and novel uses of glass. The text summarizes the current state of the art on …

Spatial variations of plasma parameters in a hollow cathode discharge

SN Andreev, AV Bernatskiy, VN Ochkin - Plasma Chemistry and Plasma …, 2021 - Springer
The transformations of the electron energy distribution (EEDF), their concentration, and
plasma space potential along the discharge gap between the hollow rectangular cathode …