3D ultrasonic rangefinder on a chip

RJ Przybyla, HY Tang, A Guedes… - IEEE Journal of Solid …, 2014 - ieeexplore.ieee.org
An ultrasonic 3D rangefinder uses an array of AlN MEMS transducers and custom readout
electronics to localize targets over a±45° field of view up to 1 m away. The rms position error …

A high-voltage-tolerant and precise charge-balanced neuro-stimulator in low voltage CMOS process

Z Luo, MD Ker - IEEE transactions on biomedical circuits and …, 2016 - ieeexplore.ieee.org
This paper presents a 4× VDD neuro-stimulator in a 0.18-μm 1.8 V/3.3 V CMOS process.
The self-adaption bias technique and stacked MOS configuration are used to prevent …

Combined in-pixel linear and single-photon avalanche diode operation with integrated biasing for wide-dynamic-range optical sensing

H Ouh, B Shen, ML Johnston - IEEE Journal of Solid-State …, 2019 - ieeexplore.ieee.org
This article presents a fully integrated, wide linear dynamic range (DR) optical sensor array
combining linear and single-photon avalanche diode (SPAD) operation within each pixel. A …

11.8 integrated ultrasonic system for measuring body-fat composition

HY Tang, Y Lu, S Fung, DA Horsley… - … Solid-State Circuits …, 2015 - ieeexplore.ieee.org
An accurate, low-power, and highly integrateci solution for accurate assessment of body fat
is presented that addresses a growing consumer interest in economical and easy-to-use …

Analysis and design of high-efficiency charge pumps with improved current driving capability using gate voltage boosting technique

Y Zhou, S Ma, ZG Wang, H Zhang… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
This paper presents two high-efficiency charge pumps (CPs) by utilizing the gate voltage
boosting technique (GVBT). Unlike traditional bulk-CMOS and all-NMOS CPs, an input bias …

Regulated charge pump with new clocking scheme for smoothing the charging current in low voltage CMOS process

Z Luo, MD Ker, WH Cheng… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
A regulated cross-couple charge pump with new charging current smoothing technique is
proposed and verified in a 0.18-μm 1.8-V/3.3-V CMOS process. The transient behaviors of 3 …

A 36-V 49% efficient hybrid charge pump in nanometer-scale bulk CMOS technology

Y Ismail, H Lee, S Pamarti… - IEEE Journal of Solid …, 2017 - ieeexplore.ieee.org
This paper introduces a hybrid charge pump (HCP) architecture. The HCP enables high-
voltage dc outputs in a nanometer-scale CMOS technology at improved power efficiency by …

A digitally dynamic power supply technique for 16-channel 12 V-tolerant stimulator realized in a 0.18-μm 1.8-V/3.3-V low-voltage CMOS process

Z Luo, MD Ker, TY Yang… - IEEE transactions on …, 2017 - ieeexplore.ieee.org
A new digitally dynamic power supply technique for 16-channel 12-V-tolerant stimulator is
proposed and realized in a 0.18-μm 1.8-V/3.3-V CMOS process. The proposed stimulator …

A 1.2 V–20 V closed-loop charge pump for high dynamic range photodetector array biasing

B Shen, S Bose, ML Johnston - IEEE Transactions on Circuits …, 2018 - ieeexplore.ieee.org
Ultra-high dynamic range optical sensing is achieved by operating a CMOS photodiode or
imager alternately in linear and single-photon avalanche modes, which requires reverse …

A high-voltage generator and multiplexer for electrostatic actuation in programmable matter

Y Peng, G Carichner, Y Kim, LY Chen… - IEEE Journal of Solid …, 2022 - ieeexplore.ieee.org
Programmable matter (PM) consists of tiny, mm-scale quasi-spherical robots that can be
combined and programmed to form any arbitrary 3-D shape autonomously. While PM …