Thin‐Film Transistors for Integrated Circuits: Fundamentals and Recent Progress

A Yan, C Wang, J Yan, Z Wang, E Zhang… - Advanced Functional …, 2024 - Wiley Online Library
High‐performance thin‐film transistors (TFTs) integrated circuits (ICs) have become
increasingly necessary to meet the emerging demands such as healthcare, edge computing …

Monolithic 3D integration as a pathway to energy-efficient computing and beyond: From materials and devices to architectures and chips

Y Fan, R An, J Tang, Y Li, T Liu, B Gao, H Qian… - Current Opinion in Solid …, 2024 - Elsevier
As emerging technologies like artificial intelligence (AI) and big data continue to evolve, the
demand for high-performance computing (HPC) has been increasing, driving the …

Optimizing the Performance of the Atomic-Layer-Deposited Zinc–Tin-Oxide Thin Film Transistor by Ozone Treatment and Thermal Annealing

J Choi, Y Lee, S Kang, SA Mun… - ACS Applied Electronic …, 2024 - ACS Publications
This study investigated alterations in the physical and electrical characteristics of amorphous
ZnSnO (a-ZTO) thin films deposited by atomic layer deposition and a-ZTO thin film …

High performance Si-MoS2 heterogeneous embedded DRAM

K Xiao, J Wan, H Xie, Y Zhu, T Tian, W Zhang… - Nature …, 2024 - nature.com
Abstract Embedded Dynamic RAM (eDRAM) has become a key solution for large-capacity
cache in high-performance processors. A heterogeneous two transistor capacitorless …

Capacitorless Dynamic Random Access Memory with 2D Transistors by One-Step Transfer of van der Waals Dielectrics and Electrodes

J Guo, Z Lin, X Che, C Wang, T Wan, J Yan, Y Zhu… - ACS …, 2025 - ACS Publications
Dynamic random access memory (DRAM) has been a cornerstone of modern computing,
but it faces challenges as technology scales down, particularly due to the mismatch between …

Approach to Low Contact Resistance Formation on Buried Interface in Oxide Thin-Film Transistors: Utilization of Palladium-Mediated Hydrogen Pathway

Y Shi, M Tsuji, H Cho, S Ueda, J Kim, H Hosono - ACS nano, 2024 - ACS Publications
Amorphous oxide semiconductors (AOSs) with low off-currents and processing temperatures
offer promising alternative materials for next-generation high-density memory devices. The …

Sequential Design of PEALD In–Ga–Zn–O Active Layer for Enhancing TFT Stability

HL Yang, YS Kim, T Hwang… - … on Electron Devices, 2023 - ieeexplore.ieee.org
The accelerating downscaling of transistors in recent years has resulted in significant
attention being paid to the development of amorphous oxide semiconductors, such as …

Compositional tailoring of indium-free GZO layers via plasma-enhanced atomic layer deposition for highly stable IGZO/GZO TFT

HJ Oh, YS Kim, HJ Jeong, S Lee, JS Park… - Journal of Information …, 2024 - Taylor & Francis
Oxide semiconductor-based thin-film transistors (TFTs) are promising candidates for display
backplanes and memory device applications. To achieve high device performance and …

Contact‐Engineered Oxide Memtransistors for Homeostasis‐Based High‐Linearity and Precision Neuromorphic Computing

S Nam, D Kang, SP Jeon, D Nam, JW Jo, SJ Park… - Small, 2025 - Wiley Online Library
Homeostasis is essential in biological neural networks, optimizing information processing
and experience‐dependent learning by maintaining the balance of neuronal activity …

Ultrathin In2O3 thin-film transistors deposited from trimethylindium and ozone

J Zhu, J Li, S Ju, L Lu, S Zhang, X Wang - Nanotechnology, 2024 - iopscience.iop.org
Abstract Indium oxide (In 2 O 3) is a promising channel material for thin-film transistors
(TFTs). In this work, we develop an atomic layer deposition (ALD) process of using …