A brief review on the present knowledge of the electronic properties of the Ga (In) NAs
ternary and quaternary alloys is given mainly from an experimental perspective. The …

We have studied the effect of rapid thermal annealing (RTA) on GaInNAs/GaAs quantum
wells (QWs) grown by molecular-beam epitaxy using a dc plasma as the N source. It was …

We analyze the influence of annealing on compositional fluctuations in InGaAsN quantum
wells by means of composition-sensitive high-resolution transmission electron microscopy …

We investigated the mechanisms of improved GaInNAs optical properties by thermal
annealing. The absorption spectra measured for the bulk layer indicated that the large shift …

We report on the lasing characteristics of low-threshold long-wavelength GaInNAs double
quantum well (DQW) lasers grown by metalorganic chemical vapor deposition (MOCVD) …

In this paper, we present the application of photoreflectance (PR) spectroscopy to
investigate the energy level structure of GaInNAs-based quantum wells (QWs). Series of …

The effect of rapid thermal annealing (RTA) on the optical properties of GaN x As 1− x/GaAs
strained single quantum well (SQW) was studied by low-temperature photoluminescence …

This letter aims to describe the effect of rapid thermal annealing on a Ga 0.64 In 0.36 As 0.99
N 0.01/GaAs single quantum well grown by molecular-beam epitaxy. This effect was …

We have investigated growth of GaInNAs by MOCVD using dimethylhydrazine (DMHy) and
by CBE using RF-radical nitrogen. It was found that there was a large difference in nitrogen …

We report photoreflectance investigations of the energy-fine structure of GaInNAs/GaAs
multiple quantum wells (MQWs) grown at different temperatures and postgrown treated by …