Instabilities in semiconductor heterostructure growth can be exploited for the self-organized
formation of nanostructures, allowing for carrier confinement in all three spatial dimensions …

In semiconductor heteroepitaxy the growing film frequently undergoes a series of strain relief
mechanisms that may include surface reconstruction, step bunching, faceting, and finally …

During the last 20 years interest in high-resolution x-ray diffractometry and reflectivity has
grown as a result of the development of the semiconductor industry and the increasing …

A review is given on the formation mechanisms and the properties of Si/Ge nanostructures
that have been synthesized by self-assembling and self-ordering during heteroepitaxy …

On a vicinal surface under stress, elastic relaxation at steps produces a long-range attractive
interaction between the steps. As a result, the surface is unstable against step bunching …

Conventional surface probes are usually diffraction-based techniques, by which real-space
surface structures are indirectly derived from their representations in the reciprocal space …

Nanotechnologies of the future will demand the creation of large arrays of nanoscale
structures and morphologies for electronic and optoelectronic devices. One approach to the …

We report new types of kinetic growth instabilities during silicon homoepitaxy on vicinal Si
(001) surfaces with miscut angles≤ 2∘. They occur under frequently employed growth …

Germanium (Ge), the next-in-line group-IV material, bears great potential to add functionality
and performance to next-generation nanoelectronics and solid-state quantum transport …

N-polar InN layers were deposited using MOCVD on GaN-on-sapphire templates which
were miscut 4 towards the GaN m-direction. For thin layers, quantum dot-like features were …