In order to develop force fields (FF) for molecular dynamics simulations that retain the
accuracy of ab initio density functional theory (DFT), we developed a machine learning …

With the rapid development of ultrafast experimental techniques for the research of carrier
dynamics in solid-state systems, a microscopic understanding of the related phenomena …

The amorphous SiO2/Si interface is arguably the most important part in semiconductor
technology, strongly influencing the device reliability. Its electronic structure is affected by …

The oxide-semiconductor interface is a key element of MOS transistors, which are widely
used in modern electronics. In silicon electronics, SiO2 is predominantly used. The …

The gate defect of the ferroelectric HfO 2-based Si field-effect transistor (Si FeFET) plays a
dominant role in its reliability issue. The first-principles calculations are an effective method …

Reliability-and variability-aware design-technology co-optimization (RV-aware DTCO)
becomes indispensable with advanced nodes. However, four key issues hinder its practical …

Accurate microscopic description of the charge-trapping process from semiconductor to
defects in the dielectric-oxide layer is of paramount importance for understanding many …

The complexity of charge trapping in semiconductor devices, such as high-κ MOSFETs, is
increasing as the devices themselves become more complicated. To facilitate research into …

Abstract Defects in amorphous-SiO 2/Si (a-SiO 2/Si) interfaces influence greatly the
performance and reliability of Si-based devices. The major interfacial defects that exhibit …

The application of germanium (Ge)-based transistors has long been restricted by the poor
reliability of the gate dielectrics. One solution proposed in the experiment is capping the …