We develop a mathematical description of the response of weakly nonlinear systems to
second-order memory mechanisms. Our description is based on a time-varying gain …

ABSTRACT A new technique for behavioral modeling of power amplifier (PA) with short‐and
long‐term memory effects is presented here using recurrent neural networks (RNNs). RNN …

We present the first application of the recently introduced dynamic-bias measurement to the
acquisition of the scattering (S-) parameters of microwave transistors under large signal …

A novel measurement of the dynamics of high electron-mobility transistor (HEMT) and
MESFET behavior permits classification of rate-dependence mechanisms and identification …

The heat dissipation optimization process is a crucial element in high power high electron
mobility transistor (HEMT) components fabricated using the Gallium Nitride grown on silicon …

This article presents a real-time nonlinear vector network analyzer (NVNA) testbed that
enables the acquisition of the isothermal transient response of GaN HEMTs operating in …

A new setup is proposed for the measurement of current–voltage pulsed characteristics of
electron devices. The main advantages of the system consist in: shorter pulse widths …

A new small-signal equivalent-circuit model is presented, which takes into account strong
impact-ionization effects on the high-frequency behavior of heterostructure field-effect …

This paper elucidates the dc, pulse I–V, microwave, flicker noise, and power properties of
AlGaAs/InGaAs pseudomorphic high electron mobility transistors (pHEMTs) after various ex …

In recent years, wireless systems have rapidly evolved due to the increasing demands of
different services, functionalities, and applications. In order to provide high-speed …