From the discovery of giant magnetoresistance (GMR) to tunnel magnetoresistance (TMR),
their subsequent application in large capacity hard disk drives (HDDs) greatly speeded up …

This paper reviews emerging nonvolatile random access memories (RAM) in recent years. It
first benchmarks ferroelectric RAM (FeRAM), phase change RAM (PCRAM), resistive RAM …

Magnetization switching in magnetic tunnel junctions using spin-transfer torque and spin–
orbit torque is key to the development of future spintronic memories. However, both …

Magnetic random-access memory (MRAM) is poised to replace traditional computer memory
based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other …

Magnetic tunnel junction nanopillar with interfacial perpendicular magnetic anisotropy (PMA-
MTJ) becomes a promising candidate to build up spin transfer torque magnetic random …

Magnetic tunnel junction (MTJ), which arises from emerging spintronics, has the potential to
become the basic component of novel memory, logic circuits, and other applications …

Spin-orbit torques (SOTs) have opened a novel way to manipulate the magnetization using
in-plane current, with a great potential for the development of fast and low power information …

Spin-transfer torque magnetic random access memory (STT-RAM) is a promising and
emerging technology due to its many advantageous features such as scalability …

Editor's note: Phase change memory, spin-transfer torque random access memory, and
resistive random access memory are three major emerging memory technologies that …

We evaluate the resilience of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) with
perpendicular magnetic anisotropy (PMA) to displacement damage induced by heavy-ion …