Solar cells sensitized with type-II ZnSe–CdS core/shell colloidal quantum dots

Z Ning, H Tian, C Yuan, Y Fu, H Qin, L Sun… - Chemical …, 2011 - pubs.rsc.org
Solar cells sensitized with type-II ZnSe–CdS core/shell colloidal quantum dots - Chemical
Communications (RSC Publishing) DOI:10.1039/C0CC03401K Royal Society of Chemistry …

Ultrahigh-efficiency aqueous flat nanocrystals of CdSe/CdS@ Cd 1− x Zn x S colloidal core/crown@ alloyed-shell quantum wells

S Shendre, S Delikanli, M Li, D Dede, Z Pan, ST Ha… - Nanoscale, 2019 - pubs.rsc.org
Colloidal semiconductor nanoplatelets (NPLs) are highly promising luminescent materials
owing to their exceptionally narrow emission spectra. While high-efficiency NPLs in non …

Effect of phase transition on optical and photoluminescence properties of nano-MgWO4 phosphor prepared by a gamma-ray irradiation assisted polyacrylamide gel …

S Wang, H Gao, C Chen, Q Li, C Li, Y Wei… - Journal of Materials …, 2019 - Springer
This study demonstrates the synthesis of the MgWO 4 nanoparticles by a gamma-ray
irradiation assisted polyacrylamide gel method through using the citric acid as chelating …

Nonlinear optical characteristics of thermodynamic effects-and electric field-triggered Mathieu quantum dot

MK Bahar, P Başer - Micro and Nanostructures, 2022 - Elsevier
In this work, the total refractive index (TRICs) and total absorption coefficients (TACs) of a
spherical quantum dot with the Mathieu potential encompassement, generated by using In x …

Low-threshold lasing from colloidal CdSe/CdSeTe core/alloyed-crown type-II heteronanoplatelets

Y Gao, M Li, S Delikanli, H Zheng, B Liu, C Dang… - Nanoscale, 2018 - pubs.rsc.org
Colloidal type-II heterostructures are believed to be a promising solution-processed gain
medium given their spatially separated electrons and holes for the suppression of Auger …

Optical Emission of a Strained Direct-Band-Gap Ge Quantum Well Embedded<? format?> Inside InGaAs Alloy Layers

N Pavarelli, TJ Ochalski, F Murphy-Armando, Y Huo… - Physical Review Letters, 2013 - APS
We studied the optical properties of a strain-induced direct-band-gap Ge quantum well
embedded in InGaAs. We showed that the band offsets depend on the electronegativity of …

Growth and structure of In0. 5Ga0. 5Sb quantum dots on GaP (001)

EM Sala, G Stracke, S Selve, T Niermann… - Applied Physics …, 2016 - pubs.aip.org
Stranski-Krastanov (SK) growth of In 0.5 Ga 0.5 Sb quantum dots (QDs) on GaP (001) by
metalorganic vapor phase epitaxy is demonstrated. A thin GaAs interlayer prior to QD …

Type I–type II band alignment of a GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain-reducing layer composition

A Hospodková, M Zíková, J Pangrác… - Journal of Physics D …, 2013 - iopscience.iop.org
The aim of this work is to red shift quantum dot (QD) photoluminescence (PL) towards
telecommunication wavelengths by engineering the metalorganic vapour phase epitaxy …

Coexistence of type-I and type-II band alignments in antimony-incorporated InAsSb quantum dot nanostructures

YI Mazur, VG Dorogan, GJ Salamo, GG Tarasov… - Applied Physics …, 2012 - pubs.aip.org
Antimony-incorporated InAsSb quantum dots (QDs) are grown by molecular beam epitaxy
on GaAs (001) substrates. The QD density increases∼ 7 times while the QD height …

Low temperature combustion synthesis and photoluminescence mechanism of ZnO/ZnAl2O4 composite phosphors

S Xing, S Song, J Xiang - Optik, 2020 - Elsevier
Abstract ZnO, ZnAl 2 O 4 and ZnO/ZnAl 2 O 4 composite phosphors were prepared by one-
or two-step low temperature combustion synthesis method. The ZnO, ZnAl 2 O 4 and …