Ferroelectric negative capacitance
The capacitor is a key element of electronic devices and is characterized by positive
capacitance. However, a negative capacitance (NC) behaviour may occur in certain cases …
capacitance. However, a negative capacitance (NC) behaviour may occur in certain cases …
A review on emerging negative capacitance field effect transistor for low power electronics
Power consumption is the major concern for conventional CMOS based integrated circuit
and systems. Since there is a scope of lowering supply voltage with steep-subthreshold …
and systems. Since there is a scope of lowering supply voltage with steep-subthreshold …
Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 Transistors
FA McGuire, YC Lin, K Price, GB Rayner… - Nano …, 2017 - ACS Publications
It has been shown that a ferroelectric material integrated into the gate stack of a transistor
can create an effective negative capacitance (NC) that allows the device to overcome …
can create an effective negative capacitance (NC) that allows the device to overcome …
Negative capacitance in short-channel FinFETs externally connected to an epitaxial ferroelectric capacitor
We report subthreshold swings as low as 8.5 mV/decade over as high as eight orders of
magnitude of drain current in short-channel negative capacitance FinFETs (NC-FinFETs) …
magnitude of drain current in short-channel negative capacitance FinFETs (NC-FinFETs) …
Negative capacitance field effect transistor with hysteresis-free sub-60-mV/decade switching
We demonstrate a nearly hysteresis-free sub60-mV/decade subthreshold swing (SS)
operation in a p-type bulk metal-oxide-semiconductor field-effect transistor externally …
operation in a p-type bulk metal-oxide-semiconductor field-effect transistor externally …
Physics-based circuit-compatible SPICE model for ferroelectric transistors
We present a SPICE model for ferroelectric transistors (FEFETs) based on time-dependent
Landau-Khalatnikov equation solved self-consistently with the transistor equations. The …
Landau-Khalatnikov equation solved self-consistently with the transistor equations. The …
Ferroelectric HfZrOx Ge and GeSn PMOSFETs with Sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved Ids
We report the first ferroelectric (FE) HfZrO x (HZO) Ge and GeSn pMOSFETs with sub-60
mV/decade subthreshold swing (SS)(40~ 43 mV/decade), negligible hysteresis, and …
mV/decade subthreshold swing (SS)(40~ 43 mV/decade), negligible hysteresis, and …
Ferroelectric negative capacitance field effect transistor
With the progress in silicon circuit miniaturization, lowering power consumption becomes the
major objective. Supply voltage scaling in ultralarge‐scale integration (ULSI) is limited by …
major objective. Supply voltage scaling in ultralarge‐scale integration (ULSI) is limited by …
Negative capacitance transistors
JC Wong, S Salahuddin - Proceedings of the IEEE, 2018 - ieeexplore.ieee.org
In recent years, the negative capacitance effect in ferroelectric (FE) materials has attracted
significant attention from many researchers around the world. The negative capacitance …
significant attention from many researchers around the world. The negative capacitance …
Subthreshold swing improvement in MoS 2 transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO 2/HfO 2 gate dielectric stack
Obtaining a subthreshold swing (SS) below the thermionic limit of 60 mV dec− 1 by
exploiting the negative-capacitance (NC) effect in ferroelectric (FE) materials is a novel …
exploiting the negative-capacitance (NC) effect in ferroelectric (FE) materials is a novel …