SH waves in a stressed piezoelectric semiconductor plates: Electron and hole drift phenomenon
Can the residual stresses affect significantly the drift of electrons and holes? The main goal
of this research is to provide answers to this question. Although the behavior of acoustic …
of this research is to provide answers to this question. Although the behavior of acoustic …
Monolayer‐thick GaN/AlN multilayer heterostructures for deep‐ultraviolet optoelectronics
Recent progress in the development of monolayer (ML)‐thick GaN/AlN multilayer
heterostructures for deep‐ultraviolet (UV) optoelectronics is reviewed. Analysis of both …
heterostructures for deep‐ultraviolet (UV) optoelectronics is reviewed. Analysis of both …
2.5 A/mm/350 GHz aggressively scaled gate engineered Fe-doped AlN/GaN channel HEMT with graded InGaN Backbarrier on SiC-wafer for next generation RF …
This study intends to investigate the effects of barrier scaling, a crucial RF GaN-HEMT
design element, which is imperative to achieve enhanced performance at nano-scale …
design element, which is imperative to achieve enhanced performance at nano-scale …
Investigation on effect of AlN barrier thickness and lateral scalability of Fe-doped recessed T-gate AlN/GaN/SiC HEMT with polarization-graded back barrier for future …
In this study, the influence of AlN barrier thickness (tb) on the RF & DC performances of 50
nm recessed T-gate Fe-doped AlN/GaN/SiC HEMT is investigated. The proposed HEMT …
nm recessed T-gate Fe-doped AlN/GaN/SiC HEMT is investigated. The proposed HEMT …
Deep ultraviolet light source from ultrathin GaN/AlN MQW structures with output power over 2 watt
High‐output‐power electron‐beam (e‐beam) pumped deep ultraviolet (DUV) light sources,
operating at 230–270 nm, are achieved by adjusting the well thickness of binary ultrathin …
operating at 230–270 nm, are achieved by adjusting the well thickness of binary ultrathin …
III-nitride short period superlattices for deep UV light emitters
SA Nikishin - Applied Sciences, 2018 - mdpi.com
Featured Application Advanced infrared, visible, and ultraviolet light emitters. Abstract III-
Nitride short period superlattices (SPSLs), whose period does not exceed~ 2 nm (~ 8 …
Nitride short period superlattices (SPSLs), whose period does not exceed~ 2 nm (~ 8 …
Phonons in Short-Period GaN/AlN Superlattices: Group-Theoretical Analysis, Ab initio Calculations, and Raman Spectra
We report the results of experimental and theoretical studies of phonon modes in GaN/AlN
superlattices (SLs) with a period of several atomic layers, grown by submonolayer digital …
superlattices (SLs) with a period of several atomic layers, grown by submonolayer digital …
Deep UV laser at 249 nm based on GaN quantum wells
M Shan, Y Zhang, TB Tran, J Jiang, H Long… - ACS …, 2019 - ACS Publications
In this Letter, we report on deep UV laser emitting at 249 nm based on thin GaN quantum
wells (QWs) by optical pumping at room temperature. The laser threshold was 190 kW/cm2 …
wells (QWs) by optical pumping at room temperature. The laser threshold was 190 kW/cm2 …
M-plane AlGaN digital alloy for microwire UV-B LEDs
The growth of non-polar AlGaN digital alloy (DA) is achieved by metal-organic vapor phase
epitaxy using GaN microwire m-facets as the template. This AlGaN DA consisting of five …
epitaxy using GaN microwire m-facets as the template. This AlGaN DA consisting of five …
High detectivity solar blind photodetector based on mechanical exfoliated hexagonal boron nitride films
M Qiu, Z Jia, M Yang, K Nishimura, CT Lin… - …, 2023 - iopscience.iop.org
As an ultra-wide bandgap semiconductor, hexagonal boron nitride (h-BN) has drawn great
attention in solar-blind photodetection owing to its wide bandgap and high thermal …
attention in solar-blind photodetection owing to its wide bandgap and high thermal …