A series of strained GaAsBi/GaAs multiple quantum well diodes are characterised to assess
the potential of GaAsBi for photovoltaic applications. The devices are compared with …

Abstract 100 nm thick GaAsBi layers were grown at a range of temperatures using both As 2
and As 4. Measurements of Bi incorporation based on room temperature …

Bismuth alloying with GaAs has promised greater advantages in the realization of more
convenient mid and near IR photonic devices owing to its novel and unique properties. The …

A comprehensive assessment of the nature of the distribution of sub band-gap energy states
in bulk GaAsBi is presented using power and temperature dependent photoluminescence …

In this work, we report on the epitaxial growth and characterization of the
GaAs/GaAsBi/GaAs pin structure. The samples were grown on a GaAs (001) substrate using …

We report the fabrication of highly ordered arrays of GaAs/AlGaAs quantum dots (QDs) by
droplet epitaxy using in situ direct laser interference patterning. Two-dimensional arrays of …

Theoretical and experimental studies have confirmed that the GaAs 1− y Bi y semiconductor
alloy system has potential for long wavelength applications and devices with improved …

The effect of rapid thermal annealing on the optical and structural properties of GaAsBi/GaAs
quantum wells (QWs) is investigated. The photoluminescence (PL) spectra of the samples …

GaAsBi/GaAs double quantum wells and double quantum well separate confinement
heterostructures are grown at low temperatures using molecular beam epitaxy. Methods of …

GaAsBi/GaAs multiple quantum well (MQW) p–i–n diodes are grown by molecular beam
epitaxy. Transmission electron microscope images of the diodes show good agreement …