DX centers, deep levels associated with donors in III‐V semiconductors, have been
extensively studied, not only because of their peculiar and interesting properties, but also …

Introduction: metastable defects; 2. III-V compounds: DX2 and EL2 centers; 3. Other
crystalline materials; 4. Hydrogenated amorphous silicon: properties of defects; 5 …

Convenient and simple criteria are proposed enabling one to distinguish between deep
level point and extended defects (eg dislocations) in DLTS measurements. The approach is …

GaSb single crystals codoped with tellurium and sulphur were studied by capacitance
transient methods. The tellurium doping allowed us to have the free carrier concentration …

Paired temperature spectroscopy (PATS) is a recently proposed transient-capacitance-
based technique to characterise trap parameters in semiconductors. One constructs a PATS …

We review the effect of disorder on Deep Level Transient Spectroscopy (DLTS) and Paired
Temperature Spectroscopy (PATS) signals. We highlight errors made on using standard …

Surface passivation of GaAs CNRS Inist Pascal-Francis CNRS Pascal and Francis
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