An optimised XGBoost model based on genetic algorithm to search for optimal parameter
combinations is proposed in this paper. It was proved that the improved algorithm has better …

This study employs support vector regression (SVR) to develop an accurate and reliable
intrinsic parameter extraction model for gallium nitride (GaN) high electron mobility …

This paper presents an investigation into the modeling of Gallium Nitride (GaN) High
Electron Mobility Transistors (HEMTs) using multiple Machine Learning (ML) algorithms …

This study develops a condition classification system of compressor 103J and water pump
systems which are key equipment in the ammonia production line, hence the monitoring of …

Currently, gallium nitride (GaN) on silicon (Si) high-electron-mobility transistors (HEMT) are
a promising candidate for designing improved power electronic circuits. The lattice mismatch …

This article presents efficient parameters extraction procedure applied to GaN High electron
mobility transistor (HEMT) on Si and SiC substrates. The method depends on combined …

Efficient transistor modeling is an essential step toward improved fabrication processes and
reliable circuit design. This puts more pressure on the model developer to consider the …

Particle swarm optimization algorithm is based on the natural behavior of fish schooling or
the birds flocking. This algorithm offers good performance in a variety of domains. PSO also …

Recently, Global Optimization algorithms are becoming an efficient tool to solve complicated
problems for various applications. Modern optimization algorithms like Black Hole …

In this letter, a strategy dedicated to the concise and efficient development of the customized
large-signal models for GaAs HEMTs is proposed, which is specialized for MMIC designers …