CMOS miniaturization is now approaching the sub-10 nm level, and further downscaling is
expected. This size scaling will end sooner or later, however, because the typical size is …

We developed an Al 2 O 3/HfO 2 bi-layer gate dielectric with an in-situ O 3 treatment for
interface state density (D it) and gate leakage current density (J g) reductions on SiGe …

High-k HfO 2 has been widely adopted in Si based MOSFETs as gate dielectric for the
superior control over gate leakage and channel electrostatics. However, in AlGaN/GaN …

We report improvement of TiN/Y 2 O 3/Si 0.78 Ge 0.22 metal-oxide-semiconductor (MOS)
interface properties by employing the trimethylaluminum (TMA) pretreatment before Y 2 O 3 …

The high peak mobility of 509 cm 2/V· s of the chemical vapor deposition-grown GeSn
pMOSFETs is obtained using 1-nm Ge cap. The Ge cap on GeSn can reduce the scattering …

A low equivalent-oxide-thickness of 0.58 nm and a low gate leakage current density of~ 2×
10-5 A/cm 2 at VG= V FB-1 V in p-substrate Ge (pGe) MOS device can be simultaneously …

Embodiments of the present invention are directed to a method of fabricating air gap
spacers. A non-limiting example of the method of fabricating air gap spacers includes …

The realization of Ge gate stacks with a small amount of slow trap density as well as thin
equivalent oxide thickness and low interface state density (D it) is a crucial issue for Ge …

Significant improvements on Ge nMOSFET can be achieved by a novel low temperature
supercritical phase fluid treatment with H 2 O 2 cosolvent. Thanks to the reduction of oxygen …

In this work, a forming-free HfOx-based resistive random access memory (RRAM) with
improved uniformity is successfully demonstrated without an additional doping process …