Use and performance criteria of photonic devices increase in various application areas such
as information and communication, lighting, and photovoltaics. In many current and future …

Defects in the gate oxide give rise to bias temperature instability (BTI), which is considered a
serious threat to the device reliability of ultrascaled MOSFETs. Extrapolating the device …

This paper examines the atomic-scale defects involved in a metal-oxide-silicon field-effect-
transistor reliability problem called the negative-bias temperature instability (NBTI). NBTI has …

Reaction-Diffusion (RD) framework for interface trap generation along with hole trapping in
pre-existing and generated bulk oxide traps are used to model Negative Bias Temperature …

Threshold voltage shift (ΔVT) due to Negative Bias Temperature Instability (NBTI) in p-
MOSFETs is modeled using the BTI Analysis Tool (BAT) framework. The ΔV T time kinetics …

We study how nitridation, applied to SiON gate layers, impacts the reliability of planar metal-
oxide-semiconductor field effect transistors (MOSFETs) subjected to negative and positive …

A major intrinsic limitation of the reaction-diffusion (RD) model for negative-bias temperature
instability (NBTI) is revealed through dynamic stress experiments. We found no evidence of …

The active research conducted in the last couple of years demonstrates that negative bias
temperature instability is one of the most serious reliability concerns for highly scaled …

Negative bias temperature instability (NBTI) and its recovery phenomenon in ultrathin silicon
oxynitride (SiON 2) films were investigated. To discuss the influence of nitrogen …

With the continuing miniaturization of MOS transistors, a phenomenon called the negative
bias temperature instability (NBTI) has evolved into a serious reliability concern. In the …