The layers of a high-temperature novel GaAs: Fe diluted magnetic semiconductor (DMS)
with an average Fe content up to 20 at.% were grown on (001) i-GaAs substrates using a …

I employ a kinetic-exchange tight-binding method to determine the electronic structures and
optical characteristics of Mn-ion solitary dopant embedded in CdSe nanocrystals and …

We investigate the properties of a single substitutional Mn impurity and its associated
acceptor state on the (111) surface of Bi 2 Se 3 topological insulator. Combining ab initio …

Using the first principles ground state method, the electronic properties of single Fe dopant
in bulk and GaAs (1 1 0) surface are studied. Our calculations show that on-site correlations …

Using the first principles ground state method, the electronic properties of single Co dopant
replacing one Ga atom on the GaAs (110) surface are studied. Our calculated local density …

Using a microscopic finite-cluster tight-binding model, we investigate the trend of the
magnetic anisotropy energy as a function of the cluster size for an individual Mn impurity …

We present results of tight-binding spin-dynamics simulations of individual and pairs of
substitutional Mn impurities in GaAs. Our approach is based on the mixed quantum-classical …

This thesis uses scanning tunneling microscopy (STM) to study Fe dopants deposited on
GaAs (110). Fe, a transition metal, can introduce magnetism into a nonmagnetic …

We report the direct observation of two mid-gap core d states of differing symmetry for a
single Fe atom embedded in GaAs. These states are distinguished by the strength of their …

Fine structure and real space analysis of neutral acceptor states in GaAs - IOPscience This
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