Monolithically Integrated Power Converter Based on Etching-Free p-GaN HEMTs by Hydrogen Plasma Treatment Technology
This paper introduces a GaN power IC platform based on the novel hydrogen (H) plasma
treatment technique to eliminate the p-GaN gate etch and improve device performance. A …
treatment technique to eliminate the p-GaN gate etch and improve device performance. A …
A Novel Enhancement-Mode Gallium Nitride p-Channel Metal Insulator Semiconductor Field-Effect Transistor with a Buried Back Gate for Gallium Nitride Single-Chip …
H Wang, K Chen, N Yang, J Zhu, E Duan, S Huang… - Electronics, 2024 - mdpi.com
In this work, a novel enhancement-mode GaN p-MISFET with a buried back gate (BBG) is
proposed to improve the gate-to-channel modulation capability of a high drain current. By …
proposed to improve the gate-to-channel modulation capability of a high drain current. By …
High-Yield Enhancement-Mode GaN p-FET With Etching-Target Layer and High-Selectivity Etching Techniques
X Zhang, Y Zhang, J Duan, Z Sun… - … on Electron Devices, 2024 - ieeexplore.ieee.org
This article presents the enhancement-mode (E-mode) GaN p-channel heterojunction field-
effect transistors (p-FETs) with p-Al0. 05Ga0. 95N etching-target layer (ETL). The optimized …
effect transistors (p-FETs) with p-Al0. 05Ga0. 95N etching-target layer (ETL). The optimized …
Hydrogen Plasma Treated p-GaN gate HEMTs Integration for DC-DC Converter
This letter presents a monolithic integrated circuit (IC) platform based on the p-GaN gated
HEMT technology with a hydrogen plasma treatment (H-treated) process. A 48 V DC-DC …
HEMT technology with a hydrogen plasma treatment (H-treated) process. A 48 V DC-DC …
Monolithic Investigation of Hydrogen Plasma-Treated and Etched p-GaN Gate HEMTs Under OFF-State Drain Stress
F Li, Y Liang, Y Zhang, Y Huang, A Li… - … on Electron Devices, 2024 - ieeexplore.ieee.org
In power conversion systems, the power devices often need to block high voltage levels
during the OFF-state. The impact of such voltage stress can cause instability for the device …
during the OFF-state. The impact of such voltage stress can cause instability for the device …
Investigation on the Dynamic Characteristics of Hydrogen Plasma Treated p-GaN HEMTs Circuit Using ASM-GaN Model
This study demonstrates the first work that achieves accurate modeling of Hydrogen plasma-
treated (H-treated) p-GaN gate devices with the ASM-GaN model, facilitating simulations for …
treated (H-treated) p-GaN gate devices with the ASM-GaN model, facilitating simulations for …
Demonstration of the p-GaN Gate HEMT with Crystalline GaOx/GaOxN1-xPassivation
Y Zhang, J Duan, Y Liang, W Wang… - … Devices and ICs …, 2024 - ieeexplore.ieee.org
We investigate GaN HEMT devices with a crystalline GaO_x/GaO_xN_1-x passivation layer.
The p-GaN layer, subjected to oxygen plasma treatment (OPT) and post-annealing process …
The p-GaN layer, subjected to oxygen plasma treatment (OPT) and post-annealing process …
Monolithic Integration of D/E-Mode Tri-Gate AlGaN/GaN MIS-HEMTs for Power ICs
A Li, W sheng Wang, F Li, Y Zhu… - … Devices and ICs …, 2024 - ieeexplore.ieee.org
This study presents the experimental validation of the integrated circuits based on DIE-mode
tri-gate GaN MIS-HEMTs. The threshold voltage of the devices can be modulated from-9.1 V …
tri-gate GaN MIS-HEMTs. The threshold voltage of the devices can be modulated from-9.1 V …
The Comparison of Dynamic Performance Between Hydrogen Treated and Etched p-GaN HEMTs
S Wu, F Li, Y Zhu, Y Huang, C Yu… - … Conference on IC …, 2023 - ieeexplore.ieee.org
In this paper, the Hydrogen plasma treated device (H-treated device) and p-GaN gate HEMT
device with etching process at the access region (Etched device) are monolithically …
device with etching process at the access region (Etched device) are monolithically …