Evaluation of basic physical parameters of quaternary Ge–Sb-(S, Te) chalcogenide glasses

V Pamukchieva, A Szekeres, K Todorova… - Journal of non …, 2009 - Elsevier
New quaternary chalcogenide GexSb40− xS50Te10 (x= 10, 20 and 27at.%) and GexSb40−
xS55Te5 (x= 20 and 27at.%) glasses have been synthesized and the compositions have …

Reverse Monte Carlo modeling of the neutron and X-ray diffraction data for new chalcogenide Ge–Sb–S (Se)–Te glasses

M Fabian, E Svab, V Pamukchieva, A Szekeres… - Journal of Physics and …, 2013 - Elsevier
New quaternary chalcogenide GexSb40− xS50Te10 and GexSb40− xSe50Te10 (x= 20 and
27at%) glasses have been synthesized and studied by neutron and high-energy X-ray …

Surface relief formation in Ge5As37S58–Se nanomultilayers

A Stronski, E Achimova, A Paiuk, V Abaskin… - Journal of Non …, 2015 - Elsevier
For the first time direct one-step relief formation of holographic grating with the use of
amorphous chalcogenide nanomultilayers of new composition based on Ge 5 As 37 S 58 …

[PDF][PDF] FSDP-related correlations in chalcogenide glasses

T Kavetskyy, O Shpotyuk, M Popescu… - … of optoelectronics and …, 2007 - researchgate.net
A first sharp diffraction peak (FSDP) is still a subject for discussion, although its connection
with medium-range order in topologically disordered solids like network glasses is generally …

Raman scattering in sulphide glasses

ID Tolmachov, AV Stronski… - … Quantum Electronics & …, 2010 - dspace.nbuv.gov.ua
Raman spectra of two ternary glasses of composition Ge₅As₃₇S₅₈ and As₄Ge₃₀S₆₆
have been investigated. An influence of addition of third element on the spectra of binary …

Simulation of the structure of GeAs4Te7 chalcogenide materials during memory switching

M Popescu, F Sava, A Velea, A Lőrinczi… - Canadian Journal of …, 2014 - cdnsciencepub.com
The complex chalcogenides with excellent memory switching properties are mainly situated
close to the border of glass formation domain. The simulation of the structural changes …

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