Ge vertical heterostructures grown on deeply-patterned Si (001) were first obtained in 2012
(CV Falub et al., Science 2012, 335, 1330–1334), immediately capturing attention due to the …

Nanoscale membranes have emerged as a new class of vertical nanostructures that enable
the integration of horizontal networks of III-V nanowires on a chip. To generalize this method …

An investigation is conducted in this paper of the effect of different textured substrates on the
growth of film. Meanwhile, a comparison of film quality with that of non-textured substrate is …

The faceting of a growing crystal is theoretically investigated by a continuum model
including the incorporation kinetics of adatoms. This allows us for predictions beyond a …

The development of three-dimensional architectures in semiconductor technology is paving
the way to new device concepts for various applications, from quantum computing to single …

This work reports on the theoretical equilibrium crystal shapes of GaAs and InAs as a
function of temperature and pressure, taking into account the contribution of the surface …

Gallium nitride (GaN) is frequently used as the primary material for manufacturing high-
brightness light-emitting diodes (LEDs). Recently, atomic layer deposition has become …

We demonstrate the feasibility of growing GaAs nanomembranes on a plastically-relaxed Ge
layer deposited on Si (111) by exploiting selective area epitaxy in MBE. Our results are …

3C-SiC is a promising material for low-voltage power electronic devices but its growth is still
challenging. Heteroepitaxy of 3C-SiC on Si micrometer-sized pillars is regarded as a viable …

We investigate light-matter interactions in periodic silicon microcrystals fabricated combining
top-down and bottom-up strategies. The morphology of the microcrystals, their periodic …