Research on electronic devices and materials is currently driven by both the slowing down
of transistor scaling and the exponential growth of computing needs, which make present …

The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

With the scaling of lateral dimensions in advanced transistors, an increased gate
capacitance is desirable both to retain the control of the gate electrode over the channel and …

Ferroelectric and ferroelastic domain walls are 2D topological defects with thicknesses
approaching the unit cell level. When this spatial confinement is combined with observations …

In the past five decades, the semiconductor industry has gone through two distinct eras of
scaling: the geometric (or classical) scaling era and the equivalent (or effective) scaling era …

The past decade has witnessed dramatic progress related to various aspects of emergent
topological polar textures in oxide nanostructures displaying vortices, skyrmions, merons …

The properties of ferroelectric materials, which were discovered almost a century ago, have
led to a huge range of applications, such as digital information storage, pyroelectric energy …

Ferroelectric materials, because of their robust spontaneous electrical polarization, are
widely used in various applications. Recent advances in modelling, synthesis and …

Negative capacitance is a newly discovered state of ferroelectric materials that holds
promise for electronics applications by exploiting a region of thermodynamic space that is …

Negative capacitance in ferroelectric materials has been suggested as a solution to reduce
the power dissipation of electronics beyond fundamental limits. The discovery of …