Properties and perspectives of ultrawide bandgap Ga2O3 in optoelectronic applications
Abstract Gallium oxide (Ga 2 O 3) is an ultrawide bandgap semiconducting material that has
been developed for many advanced technology and engineering applications and has …
been developed for many advanced technology and engineering applications and has …
High-performance solar-blind photodetector arrays constructed from Sn-doped Ga2O3 microwires via patterned electrodes
YC Lu, ZF Zhang, X Yang, GH He, CN Lin, XX Chen… - Nano Research, 2022 - Springer
Ga2O3 has been regarded as a promising material for solar-blind detection due to its
ultrawide bandgap and low growth cost. Although semiconductor microwires (MWs) possess …
ultrawide bandgap and low growth cost. Although semiconductor microwires (MWs) possess …
Biological UV Photoreceptors‐Inspired Sn‐Doped Polycrystalline β‐Ga2O3 Optoelectronic Synaptic Phototransistor for Neuromorphic Computing
In this study, the authors fabricate Sn‐doped 100‐nm thick polycrystalline β‐Ga2O3 synaptic
field‐effect transistors (FETs) emulating optical and electrical spike stimulation. When …
field‐effect transistors (FETs) emulating optical and electrical spike stimulation. When …
Effect of oxygen flow ratio on the performance of RF magnetron sputtered Sn-doped Ga2O3 films and ultraviolet photodetector
C Wang, WH Fan, YC Zhang, PC Kang, WY Wu… - Ceramics …, 2023 - Elsevier
This work explored the properties of RF magnetron sputtered Sn-doped Ga 2 O 3 films
grown on sapphire substrates at different oxygen flow ratios from 0.0 to 2.5%. The in situ …
grown on sapphire substrates at different oxygen flow ratios from 0.0 to 2.5%. The in situ …
Mg-doped beta-Ga2O3 films deposited by plasma-enhanced atomic layer deposition system for metal-semiconductor-metal ultraviolet C photodetectors
SY Chu, TH Yeh, CT Lee, HY Lee - Materials Science in Semiconductor …, 2022 - Elsevier
In this study, magnesium-doped gallium oxide (Ga 2 O 3: Mg) films with various Mg contents
were deposited by a plasma-enhanced atomic layer deposition (PE-ALD) system and were …
were deposited by a plasma-enhanced atomic layer deposition (PE-ALD) system and were …
Heteroepitaxial Growth of Single-Crystalline β-Ga2O3 on GaN/Al2O3 Using MOCVD
The formation of n-Ga2O3/p-GaN heterojunctions has been studied intensively due to the
lack of p-Ga2O3. Metalorganic chemical vapor deposition (MOCVD) is known to provide a …
lack of p-Ga2O3. Metalorganic chemical vapor deposition (MOCVD) is known to provide a …
[HTML][HTML] Ultrasensitive UV-C detection based on MOCVD-grown highly crystalline ultrawide bandgap orthorhombic κ-Ga2O3
Abstract Orthorhombic κ-Ga 2 O 3, as one of the Ga 2 O 3 polymorphs, is considered a
promising as ultrawide bandgap material for extreme environment devices. It is considered …
promising as ultrawide bandgap material for extreme environment devices. It is considered …
Codoping of Al and In atoms in β-Ga2O3 semiconductors
S Kim, H Ryou, J Moon, IG Lee, WS Hwang - Journal of Alloys and …, 2023 - Elsevier
Al and In dopants are codoped in β-Ga 2 O 3 nanostructures via hydrothermal synthesis.
Unlike single-dopant β-Ga 2 O 3 nanostructures, less mechanical strain is induced in the β …
Unlike single-dopant β-Ga 2 O 3 nanostructures, less mechanical strain is induced in the β …
An 8-nm-thick Sn-doped polycrystalline β-Ga2O3 MOSFET with a “normally off” operation
Monoclinic gallium oxide (β-Ga 2 O 3) has attracted the interest of the scientific community
due to its application in power electronics. Power electronics that need to handle a high …
due to its application in power electronics. Power electronics that need to handle a high …
Solar‐Blind Ultrathin Sn‐Doped Polycrystalline Ga2O3 UV Phototransistor for Normally Off Operation
Deep ultraviolet (DUV) photodetectors (PDs) based on ultrawide bandgap β‐Ga2O3 have
great potential for aerospace, military, and civilian applications, especially because of their …
great potential for aerospace, military, and civilian applications, especially because of their …