A comprehensive review on emerging artificial neuromorphic devices
The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …
efficiency and ultralow power consumption. In the past few decades, neuromorphic …
Nanoionic memristive phenomena in metal oxides: the valence change mechanism
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …
valence change mechanism (VCM), which has become a major trend in electronic materials …
Dynamic interplay between metal nanoparticles and oxide support under redox conditions
H Frey, A Beck, X Huang, JA van Bokhoven… - Science, 2022 - science.org
The dynamic interactions between noble metal particles and reducible metal-oxide supports
can depend on redox reactions with ambient gases. Transmission electron microscopy …
can depend on redox reactions with ambient gases. Transmission electron microscopy …
Memristive devices for computing
Memristive devices are electrical resistance switches that can retain a state of internal
resistance based on the history of applied voltage and current. These devices can store and …
resistance based on the history of applied voltage and current. These devices can store and …
[HTML][HTML] Resistive switching phenomena: A review of statistical physics approaches
Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …
Emerging memories: resistive switching mechanisms and current status
The resistance switching behaviour of several materials has recently attracted considerable
attention for its application in non-volatile memory (NVM) devices, popularly described as …
attention for its application in non-volatile memory (NVM) devices, popularly described as …
Redox-Based Resistive Switching Memories-Nanoionic Mechanisms, Prospects, and Challenges.
R Waser, R Dittmann, G Staikov… - … Materials (Deerfield Beach …, 2009 - europepmc.org
This review article introduces resistive switching processes that are being considered for
nanoelectronic nonvolatile memories. The three main classes are based on an …
nanoelectronic nonvolatile memories. The three main classes are based on an …
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
Resistance switching in metal oxides could form the basis for next-generation non-volatile
memory. It has been argued that the current in the high-conductivity state of several …
memory. It has been argued that the current in the high-conductivity state of several …
Nonvolatile memory materials for neuromorphic intelligent machines
Recent progress in deep learning extends the capability of artificial intelligence to various
practical tasks, making the deep neural network (DNN) an extremely versatile hypothesis …
practical tasks, making the deep neural network (DNN) an extremely versatile hypothesis …
Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
This review article summarized the recent understanding of resistance switching (RS)
behavior in several binary oxide thin film systems. Among the various RS materials and …
behavior in several binary oxide thin film systems. Among the various RS materials and …