Luminescence and related investigations of recombination in hydrogenated amorphous
silicon prepared by glow discharge and sputtering are described. Emphasis is given to a …

Amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based
solar cells due to its combination of excellent passivation of the crystalline silicon surface …

We have studied the current–voltage (I–V) characteristics of p+ a-SiC: H/n c-Si
heterojunction solar cells at different conditions. Under standard test conditions (300 K, 100 …

A heteroquantum-dots (HQD) model for hydrogenated nanocrystalline silicon films (nc-Si: H)
is proposed. The main features of our model are as follows.(i) the nanocrystalline grains and …

An experimental and numerical study of a-SiGe: H based solar cells with a band gap graded
i layer in the shape of a “V” is presented. The variation of the location of the band gap …

A heteroquantum dot (HQD) tunneling model for the conduction mechanism of
hydrogenated nanocrystalline silicon films is proposed. The main features of the HQD model …

We have used internal photoemission measurements to determine the electrical band gap of
microcrystalline p-type layers used in a-Si: H alloy solar cells, and the band edge …

We have measured core-level and valence-band spectra of a-Si 1− x C x and a-Si 1− x C x:
H (0≤ x≤ 1), alloys of 2H-SiC, and of the a-Si/a-Si 1− x C x and a-Si/a-Si 1− x C x: H …

We used the internal photoemission IPE technique to accurately determine the valence and
conduction band offsets at the a-SiC: H/c-Si interface and investigated with numerical …

Electrical conductivity measurements on a-Ge: H/a-Si: H superlattices parallel and
perpendicular to the layers are explained by a simple quantum well model which yields …