Probing the semiconductor to semimetal transition in InAs/GaSb double quantum wells by magneto-infrared spectroscopy
We perform a magnetoinfrared spectroscopy study of the semiconductor to semimetal
transition of InAs/GaSb double quantum wells from the normal to the inverted state. We show …
transition of InAs/GaSb double quantum wells from the normal to the inverted state. We show …
Enhanced NMR with Optical Pumping Yields 75As Signals Selectively from a Buried GaAs Interface
MM Willmering, ZL Ma, MA Jenkins… - Journal of the …, 2017 - ACS Publications
We have measured the 75As signals arising from the interface region of single-crystal semi-
insulating GaAs that has been coated and passivated with an aluminum oxide film deposited …
insulating GaAs that has been coated and passivated with an aluminum oxide film deposited …
Describing angular momentum conventions in circularly polarized optically pumped NMR in GaAs and CdTe
The physical phenomena governing hyperpolarization through optical pumping of
conduction electrons continue to be explored in multiple semiconductor systems. One early …
conduction electrons continue to be explored in multiple semiconductor systems. One early …
Complete characterization of GaAs gradient-elastic tensors and reconstruction of internal strain in GaAs/AlGaAs quantum dots using nuclear magnetic resonance
Recently, we have calibrated the diagonal components S 11= S xxxx of the GaAs gradient
elastic tensor S ijkl using nuclear magnetic resonance (NMR) and photoluminescence …
elastic tensor S ijkl using nuclear magnetic resonance (NMR) and photoluminescence …
[HTML][HTML] Interband and intraband relaxation dynamics in InSb based quantum wells
M Bhowmick, GA Khodaparast, TD Mishima… - Journal of Applied …, 2016 - pubs.aip.org
We utilize pump/probe spectroscopy to determine the interband and intraband relaxation
dynamics in InSb based quantum wells. Using non-degenerate pump/probe techniques, we …
dynamics in InSb based quantum wells. Using non-degenerate pump/probe techniques, we …
Structural, morphological and magnetotransport properties of composite semiconducting and semimetallic InAs/GaSb superlattice structure
Properties of a double-period InAs/GaSb superlattice grown by solid-source molecular beam
epitaxy are presented. Precise growth conditions at the InAs/GaSb heterojunction yielded …
epitaxy are presented. Precise growth conditions at the InAs/GaSb heterojunction yielded …
Probing strain modulation in a gate-defined one-dimensional electron system
Gate patterning on semiconductors is routinely used to electrostatically restrict electron
movement into reduced dimensions. At cryogenic temperatures, where most studies are …
movement into reduced dimensions. At cryogenic temperatures, where most studies are …
Probe of the Band Structure of MBE Grown p-Type InMnAs at Ultrahigh Magnetic Fields
Y Sun, FV Kyrychenko, GD Sanders, CJ Stanton… - Spin, 2015 - World Scientific
We present a theoretical and experimental study on electronic and magneto-optical
properties of p-type paramagnetic InMnAs dilute magnetic semiconductor (DMS) alloys in …
properties of p-type paramagnetic InMnAs dilute magnetic semiconductor (DMS) alloys in …
Probing the magnetic field dependence of the light hole transition in GaAs/AlGaAs quantum wells using optically pumped NMR
Optically pumped NMR (OPNMR) of the NMR-active Ga 69/71 species has been shown to
be a unique method to probe electronic energy bands in GaAs, with sensitivity to the light …
be a unique method to probe electronic energy bands in GaAs, with sensitivity to the light …
Interface-sensitive nuclear magnetic resonance at a semiconductor heterojunction using hyperpolarization
A Goto, K Hashi, S Ohki, T Shimizu - Physical Review Materials, 2017 - APS
We demonstrate an interface-sensitive NMR in a semiconducting nanostructure, where an
NMR signal from the minute heterojunction region of a model heterojunction structure (I n …
NMR signal from the minute heterojunction region of a model heterojunction structure (I n …