Magnetron sputtering has been employed for several decades to produce protective and
multi-functional coatings, thanks to its versatility and ability to achieve homogeneous layers …

The process technologies of AlN growth by physical vapour transport are reviewed in this
paper with a focus on the growth parameters, crucible materials, and the type of …

Thermal atomic layer etching (ALE) of crystalline aluminum nitride (AlN) films was
demonstrated using sequential, self-limiting reactions with hydrogen fluoride (HF) and tin (II) …

In this paper, the optimal growth conditions during the physical vapour transport of bulk AlN
crystals are evaluated with regard to significantly increased deep UV transparency, while …

The technological importance of III–V nitride semiconductors relies on their variety of
applications, which cover optical, optoelectronic and electronic devices capable of operating …

With superior electrical and thermal properties, aluminum nitride (AlN) exhibits wide
application. However, AlN is rather oxygen-sensitive and tends to be oxidized at high …

The suitability of Al x Ga 1− x N epilayers to deposit onto ultra-thin NbN films has been
demonstrated for the first time. High quality single-crystal films with 5 nm thickness confirmed …

Aluminum nitride (AlN) is an ideal material for the preparation of devices such as deep
ultraviolet light-emitting diodes (UV-LEDs) and vacuum detectors because of its wide …

In the physical vapor transport (PVT) growth of AlN, re-oxidation of aluminum nitride (AlN)
source powder happening in the process of setting seed crystal into crucible seems to be …

摘要氮化铝(AlN) 具有超宽禁带宽度(6.2 eV), 高热导率(340 W/(m·℃)), 高击穿场强(11.7
MV/cm), 良好的紫外透过率, 高化学和热稳定性等优异性能, 是氮化镓基(GaN) 高温, 高频 …