Semiconducting beta-phase FeSi2 for light emitting diode applications: Recent developments, challenges, and solutions

DZ Chi - Thin Solid Films, 2013 - Elsevier
This critical review surveys β-FeSi2 research over the years with focus on reviewing recent
development in β-FeSi2-based light emitting diodes (LEDs). Based on theoretical analyses …

Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology

G Kumar Dalapati, S Masudy-Panah, A Kumar… - Scientific reports, 2015 - nature.com
This work demonstrates the fabrication of silicide/silicon based solar cell towards the
development of low cost and environmental friendly photovoltaic technology. A …

Epitaxial growth of semiconducting β-FeSi2 and its application to light-emitting diodes

T Suemasu, K Takakura, C Li, Y Ozawa, Y Kumagai… - Thin Solid Films, 2004 - Elsevier
In this paper, we review the detailed study of epitaxial growth of β-FeSi2 films by reactive
deposition epitaxy (RDE), multilayer technique and molecular beam epitaxy (MBE). The p …

Optical properties of β-FeSi2 single crystals grown from solutions

H Udono, I Kikuma, T Okuno, Y Masumoto, H Tajima… - Thin Solid Films, 2004 - Elsevier
We studied the optical absorption, polarized reflectance (PR) and photoluminescence (PL)
of β-FeSi2 single crystals grown from solution. In low-absorption measurements, we found a …

Semiconducting β-FeSi2 towards optoelectronics and photonics

Y Maeda - Thin Solid Films, 2007 - Elsevier
This article explains some recent studies on a mechanism of luminescence from β-FeSi2
and its applications to optoelectronics and photonics. A luminescence at 0.805 eV (ie the A …

Synthesis and optical properties of semiconducting beta-FeSi2 nanocrystals

Q Wan, TH Wang, CL Lin - Applied physics letters, 2003 - pubs.aip.org
Vacuum electron-beam coevaporation of Fe and Si followed by annealing in N2 ambient is
used to synthesize beta iron disilicide (β-FeSi2) nanocrystals. The reason for β-FeSi2 …

Trigonal Fe2Si Nanosheets at Fe/Amorphous SiOx Interfaces for Spintronic Nanodevices

K Sato, Y Fujii - ACS Applied Nano Materials, 2024 - ACS Publications
Trigonal Fe2Si nanosheets, which are promising candidates for spintronic nanodevices,
were synthesized at the Fe/amorphous (a-) SiO x thin film interface using electron irradiation …

Epitaxial growth and characterization of Si-based light-emitting Si/β-FeSi2 film/Si double heterostructures on Si (001) substrates by molecular beam epitaxy

T Sunohara, K Kobayashi, T Suemasu - Thin Solid Films, 2006 - Elsevier
Si/β-FeSi2/Si (SFS) heterostructures were grown epitaxially on Si (001) by reactive
deposition epitaxy (RDE) for β-FeSi2 and by molecular beam epitaxy (MBE) for Si. Distinct …

Atomic and electronic structures of the β-FeSi2/Si (001) interface

K Sagisaka, K Mitsuishi - Applied Surface Science, 2025 - Elsevier
The atomistic interface structure between β-FeSi 2 and Si substrate was investigated by
cross-sectional scanning transmission electron microscopy and density functional theory …

Growth of Si∕ β-FeSi2∕ Si double-heterostructures on Si (111) substrates by molecular-beam epitaxy and photoluminescence using time-resolved measurements

M Takauji, N Seki, T Suemasu, F Hasegawa… - Journal of applied …, 2004 - pubs.aip.org
Highly [110]∕[101]-oriented semiconducting iron disilicide β-FeSi 2 continuous films were
grown on Si (111) by molecular-beam epitaxy (MBE) using a β-FeSi 2 epitaxial template …