[PDF][PDF] Analysis of Reliability for the Gate Level Fault Tolerant Design using Probabilistic Transfer Matrix method
D Manimekalai, P Dixit - Int. J. Com. Dig. Sys, 2017 - academia.edu
As semiconductor integrated circuits entered into nanometer dimensions, large variations of
parameters and drastic reduction in reliability conditions of the constituent devices may be …
parameters and drastic reduction in reliability conditions of the constituent devices may be …
Analysis of the effect of NBTI on data flip time dependency on an MTCMOS SRAM
P Anitha, BL Raju - Pakistan Journal of Biotechnology, 2017 - pjbt.org
The predominant restraining factor of the circuits lifespan are Temperature Instability effects
like NBTI and PBTI. A regular configuration to evaluate the influence of NBTI on a circuit's …
like NBTI and PBTI. A regular configuration to evaluate the influence of NBTI on a circuit's …
Empirical model for the current-voltage characteristic of resonant-tunneling devices
MT Abuelma'Atti - International journal of infrared and millimeter waves, 1991 - Springer
Empirical model for the current-voltage characteristic of resonant-tunneling devices Page 1
International Journal of Infrared and Millimeter Waves, Vol. 12, No. 8, 1991 EMPIRICAL MODEL …
International Journal of Infrared and Millimeter Waves, Vol. 12, No. 8, 1991 EMPIRICAL MODEL …
Theory of harmonic distortion at fibre connectors
MT Abuelma'Atti - International journal of infrared and millimeter waves, 1989 - Springer
Theory of harmonic distortion at fibre connectors Page 1 International Journal of Infrared
and Millimeter Waves, VoL 10, No. 6, 1989 THEORY OF HARMONIC DISTORTION AT …
and Millimeter Waves, VoL 10, No. 6, 1989 THEORY OF HARMONIC DISTORTION AT …