Low‐pressure nonequilibrium plasmas can be a source of intense radiation in the vacuum
ultraviolet (VUV) range which can play an important role in the surface modification of solid …

Organosilicate glass (OSG) films are a critical component in modern electronic devices, with
their electrical properties playing a crucial role in device performance. This comprehensive …

This paper presents an in-depth overview of the application and impact of UV/VUV light in
advanced interconnect technology. UV light application in BEOL historically was mainly …

We review the latest studies that address the fundamental understanding of low-k dielectric
electrical properties and reliability. We focus on the results discussing the nature of process …

The interaction of F atoms with porous SiOCH low-k films at a temperature of~ 14 C is
studied both experimentally and theoretically. Samples of different ultra-low-k SiOCH films …

CoTa alloy films as diffusion barriers for Cu/low-k interconnects are studied. Crystalline
structure, thermal stability, barrier and sealing properties on low-k dielectric of CoTa alloys …

The experimental and theoretical study of radiofrequency capacitively coupled plasma
discharge afterglow has been carried out. Temporal dynamics of Ar metastable and …

Self-assembled monolayers (SAMs) from an 11-cyanoundecyltrichlorosilane (CN-SAM)
precursor were deposited on porous SiCOH low-k dielectrics with three different pore radii …

The pore stuffing method is studied with the objective of improving the plasma induced
damage for porous organo-silicate glass low-k dielectrics. Experiments on blanket films …

Modification of spin-on-deposited porous PMO (periodic mesoporous organosilica) ultralow-
k (ULK) SiCOH films (k= 2.33) containing both methyl terminal and methylene bridging …