E Goh, HC Chin, KL Wong, ISB Indra… - Journal of …, 2018 - ingentaconnect.com
This research emphasizes the modelling and simulation of electronic properties of Graphene Nanoribbon (GNR) of varying widths and lengths, by employing single-neighbour …
Graphene nanoribbons (GNRs) have attracted much attention owing to their exotic electronic properties. However, it is impossible to fabricate GNRs with perfect edges. The …
An effective way to obtain interface trap density in transition metal dichalcogenide field-effect transistors (FETs) via compact device modelling is presented in this study. A computationally …
Graphene field-effect transistors (GFETs) are experimental devices which are increasingly seeing commercial and research applications. Simulation and modelling forms an important …
ISB Indra, HC Chin, KL Wong, E Goh… - Journal of …, 2018 - ingentaconnect.com
In this research, a comprehensive simulation tool based on graphene and code named the Graphene Nanoribbon Simulator (GNRSIM) of electronic properties is developed with a …
T Kim, UJ Kim, HB Son, J Hur - Science of Advanced Materials, 2017 - ingentaconnect.com
We systematically investigated the effect of chemical property of ion-gel on the graphene FET performances in terms of on/off ratio, Dirac point voltage, and transconductace. The …
P Supugade, M Khobragade… - … Conference on Next …, 2023 - ieeexplore.ieee.org
This paper presents a study of graphene nanoribbon (GNR) FETs with different gate dielectrics and/or a combination of high-k and low-k dielectrics in the device. The …
For several decades, digital complimentary metal-oxide-semiconductor (CMOS) has been the dominant technology in computer hardware. This is a result of its abundance, as well as …