The impact of the dislocation distribution and dislocation type on the charge carrier lifetime in Czochralski germanium single crystals
KP Gradwohl, U Juda, RR Sumathi - Journal of Crystal Growth, 2021 - Elsevier
Germanium crystal grown by the Czochralski method in [2 1 1] and [1 1 0] direction have
been investigated by etching methods and the charge carrier lifetime was analyzed by …
been investigated by etching methods and the charge carrier lifetime was analyzed by …
A Coupled Approach to Compute the Dislocation Density Development during Czochralski Growth and Its Application to the Growth of High-Purity Germanium (HPGe)
W Miller, A Sabanskis, A Gybin, KP Gradwohl… - Crystals, 2023 - mdpi.com
The evolution of the dislocation density during Czochralski growth is computed by the
combination of global thermal calculations and local computation of the stress and …
combination of global thermal calculations and local computation of the stress and …
[图书][B] Growth and defect investigation of high-purity germanium crystals for radiation detector applications
KP Gradwohl - 2021 - search.proquest.com
Abstract Isotopenangereicherte hochreine Germanium (HPGe) Strahlungsdetektorkristalle
mit herausragender chemischen Reinheit und kristalliner Perfektion spielen eine …
mit herausragender chemischen Reinheit und kristalliner Perfektion spielen eine …
Optimal Regime for Growth of Epitaxial Germanium Layers from the Liquid Phase Based on Thermodynamic Calculations
A Razzokov, K Eshchanov - International Journal of …, 2022 - dergipark.org.tr
Thermodynamic calculations were performed to determine the optimal conditions for the
growth of germanium epitaxial layers from a Ge-Sn solution (system) to a germanium …
growth of germanium epitaxial layers from a Ge-Sn solution (system) to a germanium …