The electrical resistance of interconnect wires increases with decreasing size, causing
signal delay and energy consumption that limits further downscaling of integrated circuits …

Integrated circuits (ICs) are challenged to deliver historically anticipated performance
improvements while increasing the cost and complexity of the technology with each …

A major challenge for the continued downscaling of integrated circuits is the resistivity
increase of Cu interconnect lines with decreasing dimensions. Alternative metals have the …

Epitaxial Ru (0001) layers are sputter deposited onto Al 2 O 3 (0001) substrates and their
resistivity ρ measured both in situ and ex situ as a function of thickness d= 5–80 nm in order …

The resistivity of nanoscale metallic conductors is orientation dependent, even if the bulk
resistivity is isotropic and electron scattering cross-sections are independent of momentum …

The effect of electron surface scattering on the thickness-dependent electrical resistivity ρ of
thin metal layers is investigated using nonequilibrium Green's function density functional …

Mo (001) and Mo (011) layers with thickness d= 4–400 nm are sputter-deposited onto MgO
(001) and α-Al2O3 (11 2¯ 0) substrates and their resistivity is measured in situ and ex situ at …

The electron reflection probability r at symmetric twin boundaries Σ3, Σ5, Σ9, and Σ11 is
predicted from first principles for the eight most conductive face-centered cubic (fcc) metals. r …

Ruthenium and molybdenum are of great potential to replace copper for use as the next-
generation interconnect metallization. Important parameters including their intrinsic …

In situ and ex situ transport measurements on epitaxial Co (0001)/Al 2 O 3 (0001) layers with
thickness d= 7–300 nm are used to quantify the resistivity ρ scaling due to electron surface …