In this paper, we present a new 9T SRAM cell that has good write ability and improves read
stability at the same time. Simulation results show that the proposed design increases read …

Soft Error Rates (SER) of hardened and unhardened SRAM cells need to be experimentally
characterized to determine their appropriate applications in radiation environments. This …

We propose a single-ended disturb-free carbon nanotube field effect transistor (CNFET)
based stable nine transistors (9T) SRAM cell using multi-threshold (multi-Vt) technology …

This paper presents a reliable single-ended nine-transistor (9T) static random access
memory (SRAM) cell which is based on 16 nm graphene nanoribbon FETs (GNRFETs) …

We propose a novel single-ended static random access memory (SRAM) design with nine
graphene nanoribbon FETs (9-GNRFET) in this paper. Single-ended has an impact on …

SRAM is widely used cache memory in the world. Materialization of low power SRAM with
highest stability is a need of the hour. As from many years the requirement of fast and low …

In this paper, a novel 8T SRAM cell is proposed which aims at decreasing the delay and
lowering the total power consumption of the cell. The threshold voltage variations in the …

In recent years improvement in the design of SRAM cell increases drastically. The two major
factors which have to be taken care are power dissipation and the noise margin of the SRAM …

Thethreshold roll-off is a vital phenomena to be considered for any low-power and small-
scale circuit design. With the advancement of the fabrication processes the channel length of …

In the last decade, with the advent of smart phones, almost all signal processing devices are
becoming the part of a single hardware. From simple calculator to complex image …