Present and future of terahertz communications
HJ Song, T Nagatsuma - IEEE transactions on terahertz science …, 2011 - ieeexplore.ieee.org
Recent changes in how people consume multimedia services are causing an explosive
increase in mobile traffic. With more and more people using wireless networks, the demand …
increase in mobile traffic. With more and more people using wireless networks, the demand …
A review of design and integration technologies for D-band antennas
M de Kok, AB Smolders… - IEEE Open Journal of …, 2021 - ieeexplore.ieee.org
This article reviews the current state-of-the-art of millimeter-wave (mm-wave) antennas for
communication and sensing applications in the D-band between 110 and 170 GHz. The …
communication and sensing applications in the D-band between 110 and 170 GHz. The …
An eight-element 140-GHz wafer-scale IF beamforming phased-array receiver with 64-QAM operation in CMOS RFSOI
This article presents a 140-GHz eight-element wafer-scale phased-array receiver based on
intermediate-frequency (IF) beamforming with 5-bit phase and 4-bit gain control. The chip …
intermediate-frequency (IF) beamforming with 5-bit phase and 4-bit gain control. The chip …
High Efficiency D-Band Multiway Power Combined Amplifiers With 17.5–19-dBm Psat and 14.2–12.1% Peak PAE in 45-nm CMOS RFSOI
This article presents fully integrated power amplifiers (PAs) with eight-way low-loss power
combining for-band applications in the GlobalFoundries CMOS 45RFSOI process. The eight …
combining for-band applications in the GlobalFoundries CMOS 45RFSOI process. The eight …
Subharmonic 220-and 320-GHz SiGe HBT receiver front-ends
E Ojefors, B Heinemann… - IEEE Transactions on …, 2012 - ieeexplore.ieee.org
Monolithically integrated 220-and 320-GHz receiver front-ends manufactured in an
engineering version of an f T/f max= 280/435-GHz SiGe technology are presented …
engineering version of an f T/f max= 280/435-GHz SiGe technology are presented …
Millimeter-wave CMOS power amplifiers with high output power and wideband performances
YH Hsiao, ZM Tsai, HC Liao, JC Kao… - IEEE Transactions on …, 2013 - ieeexplore.ieee.org
In this paper, we propose a design method of multi-way combining networks with impedance
transformation for millimeter-wave (MMW) power amplifiers (PAs) to achieve high output …
transformation for millimeter-wave (MMW) power amplifiers (PAs) to achieve high output …
An eight-element 136–147 GHz wafer-scale phased-array transmitter with 32 dBm peak EIRP and> 16 Gbps 16QAM and 64QAM operation
This article presents a 140-GHz eight-element wafer-scale phased-array transmitter based
on intermediate-frequency (IF) beamforming with 5-bit phase and 4-bit gain control in the …
on intermediate-frequency (IF) beamforming with 5-bit phase and 4-bit gain control in the …
Single-chip 220-GHz active heterodyne receiver and transmitter MMICs with on-chip integrated antenna
M Abbasi, SE Gunnarsson, N Wadefalk… - IEEE Transactions …, 2010 - ieeexplore.ieee.org
This paper presents the design and characterization of single-chip 220-GHz heterodyne
receiver (RX) and transmitter (TX) monolithic microwave integrated circuits (MMICs) with …
receiver (RX) and transmitter (TX) monolithic microwave integrated circuits (MMICs) with …
A D-band micromachined end-fire antenna in 130-nm SiGe BiCMOS technology
The design of a radiation-efficient D-band end-fire on-chip antenna utilizing a localized back-
side etching (LBE) technique, as well as an antenna-in-package (AiP) on a low-cost organic …
side etching (LBE) technique, as well as an antenna-in-package (AiP) on a low-cost organic …
A 160-GHz subharmonic transmitter and receiver chipset in an SiGe HBT technology
A monolithically integrated 160-GHz transmitter and receiver chipset with in-
phase/quadrature baseband inputs and outputs and on-chip local oscillator (LO) generation …
phase/quadrature baseband inputs and outputs and on-chip local oscillator (LO) generation …