The critical behavior and magnetocaloric properties with a room-temperature second-order
phase transition of the Mn 5 Ge 3-x Ag x (x= 0, 0.1, 0.5, and 1) compounds under the …

Polycrystalline Mn 5 Ge 3 thin films were produced on SiO 2 using magnetron sputtering and
reactive diffusion (RD) or non-diffusive reaction (NDR). In situ X-ray diffraction and atomic …

We investigated the effect of oxygen growth-pressure on the structural and magnetic
properties of epitaxial YIG thin films. YIG films were grown on single crystalline GGG …

In order to realise single on-chip three axis magnetic field sensing technology without the
need for convoluted die stacking, perpendicular media must be exploited. This poses …

We investigated the relation between magnetisation dynamics and microstructure in
magnetocaloric MnCoGe thin films grown on two different substrates (Si or Ge). All the films …

Extensive X-band and Q-band FMR experiments have been performed in the Mn 5 Ge 3
epitaxial films with thicknesses varying between 4.5 and 68 nm. FMR signals were recorded …

Mn 55 NMR was used to investigate the effect of carbon doping on the local magnetic
anisotropy in Mn 5 Ge 3 epitaxial films (space-group P 6 3/mcm). It was found that carbon …

The anisotropic magnetoresistance (AMR) of ferromagnetic Mn 5 Ge 3 C x (0≤ x≤ 1) and
Mn 5 Si 3 C x (0.5≤ x≤ 1) thin films was investigated and compared with density functional …

Abstract Cu or Fe or Co substituted off-stoichiometric Ni-Mn-Sn films of 500 nm thickness
were deposited on Si (1 0 0) substrate by dc magnetron sputtering at ambient temperature …

In this study, we demonstrate an original elaboration route for producing a Mn-doped Ge self-
assembled quantum dots on SiO 2 thin layer for MOS structure. These magnetic quantum …