A modern primer on processing in memory

O Mutlu, S Ghose, J Gómez-Luna… - … computing: from devices …, 2022 - Springer
Modern computing systems are overwhelmingly designed to move data to computation. This
design choice goes directly against at least three key trends in computing that cause …

Processing data where it makes sense: Enabling in-memory computation

O Mutlu, S Ghose, J Gómez-Luna… - Microprocessors and …, 2019 - Elsevier
Today's systems are overwhelmingly designed to move data to computation. This design
choice goes directly against at least three key trends in systems that cause performance …

Rowhammer: A retrospective

O Mutlu, JS Kim - … Transactions on Computer-Aided Design of …, 2019 - ieeexplore.ieee.org
This retrospective paper describes the RowHammer problem in dynamic random access
memory (DRAM), which was initially introduced by Kim et al. at the ISCA 2014 Conference …

Error characterization, mitigation, and recovery in flash-memory-based solid-state drives

Y Cai, S Ghose, EF Haratsch, Y Luo… - Proceedings of the …, 2017 - ieeexplore.ieee.org
NAND flash memory is ubiquitous in everyday life today because its capacity has
continuously increased and cost has continuously decreased over decades. This positive …

Blockhammer: Preventing rowhammer at low cost by blacklisting rapidly-accessed dram rows

AG Yağlikçi, M Patel, JS Kim, R Azizi… - … Symposium on High …, 2021 - ieeexplore.ieee.org
Aggressive memory density scaling causes modern DRAM devices to suffer from
RowHammer, a phenomenon where rapidly activating (ie, hammering) a DRAM row can …

A deeper look into rowhammer's sensitivities: Experimental analysis of real dram chips and implications on future attacks and defenses

L Orosa, AG Yaglikci, H Luo, A Olgun, J Park… - MICRO-54: 54th Annual …, 2021 - dl.acm.org
RowHammer is a circuit-level DRAM vulnerability where repeatedly accessing (ie,
hammering) a DRAM row can cause bit flips in physically nearby rows. The RowHammer …

Understanding reduced-voltage operation in modern DRAM devices: Experimental characterization, analysis, and mechanisms

KK Chang, AG Yağlıkçı, S Ghose, A Agrawal… - Proceedings of the …, 2017 - dl.acm.org
The energy consumption of DRAM is a critical concern in modern computing systems.
Improvements in manufacturing process technology have allowed DRAM vendors to lower …

The DRAM latency PUF: Quickly evaluating physical unclonable functions by exploiting the latency-reliability tradeoff in modern commodity DRAM devices

JS Kim, M Patel, H Hassan… - 2018 IEEE International …, 2018 - ieeexplore.ieee.org
Physically Unclonable Functions (PUFs) are commonly used in cryptography to identify
devices based on the uniqueness of their physical microstructures. DRAM-based PUFs have …

Understanding rowhammer under reduced wordline voltage: An experimental study using real dram devices

AG Yağlıkçı, H Luo, GF De Oliviera… - 2022 52nd Annual …, 2022 - ieeexplore.ieee.org
RowHammer is a circuit-level DRAM vulnerability, where repeatedly activating and
precharging a DRAM row, and thus alternating the voltage of a row's wordline between low …

The RowHammer problem and other issues we may face as memory becomes denser

O Mutlu - Design, Automation & Test in Europe Conference & …, 2017 - ieeexplore.ieee.org
As memory scales down to smaller technology nodes, new failure mechanisms emerge that
threaten its correct operation. If such failure mechanisms are not anticipated and corrected …