The linewidths and the energy shifts of the resonant states of the impurity electron in GaAs-
based quantum wells (QWs) with infinite barriers are calculated. The two-dimensional …

The terahertz radiation in GaAs/AlGaAs quantum wells with different types of doping was
experimentally studied under interband optical excitation of nonequilibrium charge carriers …

Terahertz (THz) luminescence in doped nanostructures with GaAs/AlGaAs quantum wells is
studied under conditions of interband optical pumping. The study is carried out on …

In this paper, we report the third harmonic generation in a 12–6 potential profile-shaped
GaAs/Ga\(_ {1-x}\) Al\(_x\) As double quantum well. We investigate the effects of the well …

The low-temperature impurity-assisted photoconductivity and absorption spectra of a
nanostructure with acceptor-doped multiple GaAs/AlGaAs quantum wells are investigated …

We have observed photoinduced negative optical conductivity, or gain, in the terahertz
frequency range in a GaAs multiple-quantum-well structure in a strong perpendicular …

В работе проведены сравнительные исследования фотолюминесценции (ФЛ)
ближнего ИК-диапазона в структурах с квантовыми ямами n GaAs/AlGaAs с …

The capture times of holes to the shallow excited levels of neutral mercury vacancy via
acoustic phonon emission are calculated for Hg1–x Cd x Te, as well as the transition times …

In the paper, comparative studies of near-IR photoluminescence (PL) in structures with
GaAs/AlGaAs quantum wells possessing different selective doping profiles have been …

The parameters of a structure with tunnel-coupled GaAs/AlGaAs quantum wells designed to
generate terahertz radiation during intersubband electron transitions under conditions of …