Graphene-based interconnect exploration for large SRAM caches for ultrascaled technology nodes

Z Pei, M Mayahinia, HH Liu, M Tahoori… - … on Electron Devices, 2022 - ieeexplore.ieee.org
Graphene-based interconnects are considered promising replacements for traditional
copper (Cu) interconnect due to their great electric properties. In this article, an interconnect …

Voltage boosted fail detecting circuit for selective write assist and cell current boosting for high-density low-power SRAM

J Park, S Lee, H Jeong - … Transactions on Circuits and Systems I …, 2022 - ieeexplore.ieee.org
In low supply voltage (), the wordline (WL) underdrive read assist and the negative bitline
(NBL) write assist circuits are widely used for stable operation of SRAM. However, NBL …

3.7-GHz Multi-Bank High-Current Single-Port Cache SRAM With Leakage Saving Circuits in 3-nm FinFET for HPC Applications

Y Osada, T Nakazato, Y Aoyagi, K Nii… - IEEE Journal of Solid …, 2024 - ieeexplore.ieee.org
Row decoder leakage saving (RDLS) and high-speed write driver leakage saving (HS-
WDLS) circuits are proposed to reduce leakage power while keeping high access speed …

Technology/memory co-design and co-optimization using E-Tree interconnect

Z Pei, M Mayahinia, HH Liu, M Tahoori… - Proceedings of the …, 2023 - dl.acm.org
For on-chip SRAM, a major portion of delay and energy is contributed by the H-Tree
interconnects. In this paper, we propose an E-Tree interconnect technology to minimize the …

15.4 Self-Enabled Write-Assist Cells for High-Density SRAM in a Resistance-Dominated Technology Node

M Yeo, K Cho, G Kim, WJ Jo, J Oh… - … Solid-State Circuits …, 2024 - ieeexplore.ieee.org
For applications where a significant amount of data is processed within a limited area, such
as mobile and graphics applications, the demand for higher-density SRAM becomes more …

Design of GIS Based Mobile Data Acquisition System for Agricultural Green Development

Y Li, C Zhang, L Tian - … on Electrical Engineering, Big Data and …, 2023 - ieeexplore.ieee.org
With the development of agricultural modernization, the traditional agricultural production
model has been gradually subverted, and traditional planting is no longer the main way to …

A 14nm SRAM Using NMOS Header Assist Cell for Improved Write Ability and Reduced Cell Retention Leakage

J Kang, K Cho, S Kim, G Kim, H Kim… - 2024 IEEE European …, 2024 - ieeexplore.ieee.org
This paper presents NMOS header assist cell (NHAC) that lowers SRAM VMin with minimal
power overhead for low power applications. The proposed NHAC, featuring a bitcell …

Data Construction of Smart Resources in Cultural Heritage Parks Based on GIS

H Zhang, C Peng, L Wang - … on Cyber Security Intelligence and Analytics, 2022 - Springer
With the rapid development of the Internet, the construction of information infrastructure is
constantly improving and popularizing, and information management and service work is …