Wide bandgap oxide semiconductors: from materials physics to optoelectronic devices
Wide bandgap oxide semiconductors constitute a unique class of materials that combine
properties of electrical conductivity and optical transparency. They are being widely used as …
properties of electrical conductivity and optical transparency. They are being widely used as …
Conductivity in transparent oxide semiconductors
Despite an extensive research effort for over 60 years, an understanding of the origins of
conductivity in wide band gap transparent conducting oxide (TCO) semiconductors remains …
conductivity in wide band gap transparent conducting oxide (TCO) semiconductors remains …
When group-III nitrides go infrared: New properties and perspectives
J Wu - Journal of applied physics, 2009 - pubs.aip.org
Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and
near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant …
near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant …
Band offsets, Schottky barrier heights, and their effects on electronic devices
J Robertson - Journal of Vacuum Science & Technology A, 2013 - pubs.aip.org
The authors review the band line-ups and band offsets between semiconductors, dielectrics,
and metals, including the theory, experimental data, and the chemical trends. Band offsets …
and metals, including the theory, experimental data, and the chemical trends. Band offsets …
Surface Electron Accumulation and the Charge Neutrality Level in
High-resolution x-ray photoemission spectroscopy, infrared reflectivity and Hall effect
measurements, combined with surface space-charge calculations, are used to show that …
measurements, combined with surface space-charge calculations, are used to show that …
Sources of conductivity and doping limits in CdO from hybrid density functional theory
M Burbano, DO Scanlon… - Journal of the American …, 2011 - ACS Publications
CdO has been studied for decades as a prototypical wide band gap transparent conducting
oxide with excellent n-type ability. Despite this, uncertainty remains over the source of …
oxide with excellent n-type ability. Despite this, uncertainty remains over the source of …
Branch-point energies and band discontinuities of III-nitrides and III-/II-oxides from quasiparticle band-structure calculations
Using quasiparticle band structures based on modern electronic-structure theory, we
calculate the branch-point energies for zinc blende (GaN, InN), rocksalt (MgO, CdO), wurtzite …
calculate the branch-point energies for zinc blende (GaN, InN), rocksalt (MgO, CdO), wurtzite …
[HTML][HTML] Transition from electron accumulation to depletion at β-Ga2O3 surfaces: The role of hydrogen and the charge neutrality level
The surface electronic properties of bulk-grown β-Ga2O3 (201) single crystals are
investigated. The band gap is found using optical transmission to be 4.68 eV. High …
investigated. The band gap is found using optical transmission to be 4.68 eV. High …
Shallow donor state of hydrogen in and : Implications for conductivity in transparent conducting oxides
Muonium, and by analogy hydrogen, is shown to form a shallow-donor state in In 2 O 3 and
SnO 2. The paramagnetic charge state is stable below∼ 50 K in In 2 O 3 and∼ 30 K in SnO …
SnO 2. The paramagnetic charge state is stable below∼ 50 K in In 2 O 3 and∼ 30 K in SnO …
InN/GaN valence band offset: High-resolution x-ray photoemission spectroscopy measurements
High-resolution x-ray photoemission spectroscopy measurements are used to determine the
valence band offset of wurtzite-InN/GaN (0001) heterojunctions to be 0.58±0.08 eV. This is …
valence band offset of wurtzite-InN/GaN (0001) heterojunctions to be 0.58±0.08 eV. This is …