Applications of Transmission Electron Microscopy in Phase Engineering of Nanomaterials

G Li, H Zhang, Y Han - Chemical Reviews, 2023 - ACS Publications
Phase engineering of nanomaterials (PEN) is an emerging field that aims to tailor the
physicochemical properties of nanomaterials by precisely manipulating their crystal phases …

Deep sub-angstrom resolution imaging by electron ptychography with misorientation correction

H Sha, J Cui, R Yu - Science Advances, 2022 - science.org
Superresolution imaging of solids is essential to explore local symmetry breaking and
derived material properties. Electron ptychography is one of the most promising schemes to …

[HTML][HTML] SmartAxis, a software for accurate and rapid zone axis alignment of nanocrystalline materials

J Zhou, Y Wang, B Lu, J Lyu, N Wei, J Huang, L Liu… - Nano Materials …, 2024 - Elsevier
Nanocrystals have emerged as cutting-edge functional materials benefiting from the
increased surface and enhanced coupling of electronic states. High-resolution imaging in …

On the peculiarities of bright/dark contrast in HRTEM images of SiC polytypes

U Kaiser, A Chuvilin, W Richter - Ultramicroscopy, 1999 - Elsevier
Tilt induced changes in HRTEM images obtained near [110] zone of cubic centrosymmetric
Si and noncentrosymmetric SiC were studied by the use of multislice image simulations. The …

Transmission electron microscopy investigation of an ordered metastable phase in Zr-N alloys

SS Sharma, KT Moore, JM Howe - Philosophical Magazine, 2003 - Taylor & Francis
Supersaturated hcp f-Zr (N) alloys containing 22-28 at.% N were prepared by nitriding
sheets of Zr in an atmosphere of high-purity N 2, followed by homogenization under high …

Crystallographic origin of the alternate bright/dark contrast in 6H-SiC and other hexagonal crystal HREM images

JS Bow, RW Carpenter, MJ Kim - Microscopy and Microanalysis, 1996 - academic.oup.com
Alternating bright/dark anomalous subunitcell contrast in HREM images along or near the
close-packed direction of 6H-SiC, Ti5Si3, α-Ti, and 4H-SiC, all of which are hexagonal, was …