New development of atomic layer deposition: processes, methods and applications
Atomic layer deposition (ALD) is an ultra-thin film deposition technique that has found many
applications owing to its distinct abilities. They include uniform deposition of conformal films …
applications owing to its distinct abilities. They include uniform deposition of conformal films …
New Opportunities for High‐Performance Source‐Gated Transistors Using Unconventional Materials
Abstract Source‐gated transistors (SGTs), which are typically realized by introducing a
source barrier in staggered thin‐film transistors (TFTs), exhibit many advantages over …
source barrier in staggered thin‐film transistors (TFTs), exhibit many advantages over …
[HTML][HTML] Mobility overestimation due to gated contacts in organic field-effect transistors
Parameters used to describe the electrical properties of organic field-effect transistors, such
as mobility and threshold voltage, are commonly extracted from measured current–voltage …
as mobility and threshold voltage, are commonly extracted from measured current–voltage …
The Schottky barrier transistor in emerging electronic devices
This paper explores how the Schottky barrier (SB) transistor is used in a variety of
applications and material systems. A discussion of SB formation, current transport …
applications and material systems. A discussion of SB formation, current transport …
Extremely high-gain source-gated transistors
Despite being a fundamental electronic component for over 70 years, it is still possible to
develop different transistor designs, including the addition of a diode-like Schottky source …
develop different transistor designs, including the addition of a diode-like Schottky source …
High‐performance vacuum‐processed metal oxide thin‐film transistors: a review of recent developments
Since 2010, vacuum‐processed oxide semiconductors have greatly improved with the
publication of more than 1,300 related papers. Although the number of researches on oxide …
publication of more than 1,300 related papers. Although the number of researches on oxide …
Influence of oxygen-rich and zinc-rich conditions on donor and acceptor states and conductivity mechanism of ZnO films grown by ALD—Experimental studies
E Przezdziecka, E Guziewicz, D Jarosz… - Journal of Applied …, 2020 - pubs.aip.org
Understanding the origin of the strong difference of electrical parameters between as grown
and annealed undoped ZnO films prepared at a temperature range of 100–200 C by thermal …
and annealed undoped ZnO films prepared at a temperature range of 100–200 C by thermal …
Flexible Low‐Power Operative Organic Source‐Gated Transistors
Low‐voltage operation and fast switching ability are necessary for wearable electronic
devices. Recently, electrolyte dielectric materials have been widely used to decrease driving …
devices. Recently, electrolyte dielectric materials have been widely used to decrease driving …
Single-crystalline ZnO sheet source-gated transistors
Due to their fabrication simplicity, fully compatible with low-cost large-area device assembly
strategies, source-gated transistors (SGTs) have received significant research attention in …
strategies, source-gated transistors (SGTs) have received significant research attention in …
Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
Wide-bandgap, metal-oxide thin-film transistors have been limited to low-power, n-type
electronic applications because of the unipolar nature of these devices. Variations from the n …
electronic applications because of the unipolar nature of these devices. Variations from the n …