N–H-related deep-level defects in dilute nitride semiconductor GaInNAs for four-junction solar cells
Y He, N Miyashita, Y Okada - Japanese Journal of Applied …, 2018 - iopscience.iop.org
Deep-level defects were investigated and compared among three molecular beam epitaxy
(MBE)-grown dilute nitride semiconductor GaInNAsSb solar cells, one of which was as …
(MBE)-grown dilute nitride semiconductor GaInNAsSb solar cells, one of which was as …
N–H related defect playing the role of acceptor in GaAsN grown by chemical beam epitaxy
The N–H related defects at 3124 cm-1 are found to be acceptors in GaAsN grown by
chemical beam epitaxy (CBE), by comparing the concentrations of N–H defects with those of …
chemical beam epitaxy (CBE), by comparing the concentrations of N–H defects with those of …
Influence of Annealing Temperature on Emission and Capture Processes in GaAsN/GaAs Heterostructures
P Benko, A Kósa, M Matus… - 2022 14th …, 2022 - ieeexplore.ieee.org
The influence of annealing temperature on emission and capture processes in GaAsN/GaAs
diodes with a nitrogen content of 0.93, 1.51 and 1.81% have been investigated by the Deep …
diodes with a nitrogen content of 0.93, 1.51 and 1.81% have been investigated by the Deep …