Programming Characteristics of Electrochemical Random Access Memory (ECRAM)—Part II: Physics-Based Modeling
Modeling of electrochemical random access memory (ECRAM) is essential to predict device
performance and scaling, and provide simulation tools for in-memory computing (IMC) …
performance and scaling, and provide simulation tools for in-memory computing (IMC) …
Nonvolatile electrochemical memory at 600° C enabled by composition phase separation
J Li, AJ Jalbert, S Lee, LS Simakas, NJ Geisler… - Device, 2024 - cell.com
Silicon-based microelectronics are limited to∼ 150° C and therefore not suitable for the
extremely high temperatures in aerospace, energy, and space applications. While wide …
extremely high temperatures in aerospace, energy, and space applications. While wide …
Highly Scalable Vertical Bypass RRAM Using Interface-Type Resistive Switching Mechanism for V-Nand Memory Applications
G Han, J Seo, K Lee, D Kim, Y Seo… - … on Electron Devices, 2024 - ieeexplore.ieee.org
In this study, we present a vertical bypass resistive random access memory (VB-RRAM) that
integrates interface-type resistive switching RRAM with excellent memory characteristics for …
integrates interface-type resistive switching RRAM with excellent memory characteristics for …