A novel MTJ-based non-volatile ternary content-addressable memory for high-speed, low-power, and high-reliable search operation

C Wang, D Zhang, L Zeng, E Deng… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
Recently, several magnetic tunnel junction (MTJ)-based non-volatile ternary content-
addressable memory (NV-TCAM) cells have been proposed to realize zero standby power …

Design of magnetic non-volatile TCAM with priority-decision in memory technology for high speed, low power, and high reliability

C Wang, D Zhang, L Zeng… - IEEE transactions on …, 2019 - ieeexplore.ieee.org
Recently, various magnetic non-volatile ternary content-addressable memory (MNV-TCAM)
cells that use magnetic tunnel junctions (MTJs) as storage units have been proposed to …

Design of ultracompact content addressable memory exploiting 1T-1MTJ cell

C Zhuo, Z Yang, K Ni, M Imani, Y Luo… - … on Computer-Aided …, 2022 - ieeexplore.ieee.org
Content addressable memories (CAMs) are a promising category of computing-in-memory
(CiM) elements that can perform highly parallel and efficient search operations for routers …

High-speed memristive ternary content addressable memory

KP Gnawali, S Tragoudas - IEEE Transactions on Emerging …, 2021 - ieeexplore.ieee.org
This article presents an ultra-high-speed memristor-based non-volatile Ternary Content
Addressable Memory (TCAM) for use in real-time and big-data applications that require low …

Sky-tcam: Low-power skyrmion-based ternary content addressable memory

R Zhang, C Tang, X Sun, M Li, W Jin… - … on Electron Devices, 2023 - ieeexplore.ieee.org
Low-cost content-addressable memories (CAMs) are highly desirable for many applications
where high-speed search is needed such as network routers and machine learning. We …

Low power spintronic ternary content addressable memory

KP Gnawali, SN Mozaffari… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
Ternary Content Addressable Memory (TCAM) is used in applications that require a low
power dissipation and fast data retrieval. This paper presents a domain wall-based …

Nanoelectromechanical-switch-based ternary content-addressable memory (NEMTCAM)

JS Lee, WY Choi - IEEE Transactions on Electron Devices, 2021 - ieeexplore.ieee.org
A tristate-nanoelectromechanical-switch-based ternary content-addressable memory
(NEMTCAM) is proposed for the first time. In the proposed unit NEMTCAM cell, a single …

TEEMO: Temperature Aware Energy Efficient Multi-Retention STT-RAM Cache Architecture

S Agarwal, S Chakraborty… - 2024 IEEE International …, 2024 - ieeexplore.ieee.org
The potential benefits of high density, non-volatility, and reduced leakage-power
consumption make STT-RAM a credible successor to SRAM in caches. However, STT-RAMs …

Design Limitations in Oxide-Based Memristive Ternary Content Addressable Memories

L Brackmann, T Ziegler, A Jafari… - … on Circuits and …, 2023 - ieeexplore.ieee.org
Memristive devices offer energy and area efficient non-volatile data storage for data-intense
Ternary Content Ad-dressable Memory (TCAM) architectures. However, depending on the …

On the Implementation of Boolean Functions on Content-Addressable Memories

RM Roth - IEEE Journal on Selected Areas in Information …, 2023 - ieeexplore.ieee.org
Let denote the integer set and let. The problem of implementing functions on content-
addressable memories (CAMs) is considered. CAMs can be classified by the input alphabet …