This paper reviews and compares predictions of the Dutta-Horn model of low-frequency
excess (1/f) noise with experimental results for thin metal films, MOS transistors, and …

Time-Dependent Dielectric Breakdown (TDDB) models for silica (SiO2)-based dielectrics
are revisited so as to better understand the ability of each model to explain quantitatively the …

Electron paramagnetic resonance (EPR) measurements of Si/SiO 2 systems began over 30
years ago. Most EPR studies of Si/SiO 2 systems have dealt with two families of defects: P b …

Novel one-component phosphors, Cd1-x Dy x SiO3, which emit white color long-lasting
phosphorescence upon UV light excitation, are prepared by the conventional high …

Ordered semiconductor In 2 O 3 nanowire arrays are uniformly assembled into hexagonally
ordered nanochannels of anodic alumina membranes (AAMs) by electrodeposition and …

Nitridation of the SiO 2/SiC interface yields a reduction in interface state density, immunity to
electron injection, as well as increased hole trapping. It is shown that the accumulation of …

Oxygen vacancies in S i O 2 have long been regarded as bistable, forming a Si-Si dimer
when neutral and a puckered configuration when positively charged. We report first …

Si ions were implanted into thermally grown SiO2 films on crystalline Si at an energy of 120
keV and with a dose of 21016 cm 2. Under an ultraviolet excitation of 5.0 eV, the implanted …

Capture cross-section data from the literature and recent density-functional theory (DFT)
calculations strongly suggest that the 1/f noise of MOS devices is caused by the thermally …

We have performed thermally-stimulated-current (TSC) and capacitance-voltage
measurements on 370-1080 nm thermal, SIMOX, and bipolar-base oxides as functions of …