(57) ABSTRACT A manufacturing method of an active matrix light emitting device in which
the active matrix light emitting device can be manufactured in a shorter time with high yield …

Assignee: SEMICONDUCTOR ENERGY The present invention provides a manufacturing
process LABORATORY CO., LTD., using a droplet-discharging method that is suitable for …

0001 1. Field of the Invention 0002 The present invention relates to a semiconductor device
having a circuit including a thin film transistor (here inafter, referred to as a TFT) and to a …

An object is to provide a semiconductor device of which a manufacturing process is not
complicated and by which cost can be suppressed, by forming a thin film transistor using an …

Provided are a thin film transistor (TFT) including a selec tively crystallized channel layer,
and a method of manufac turing the TFT. The TFT includes a gate, the channel layer, a …

An object is to provide a semiconductor device of which a manufacturing process is not
complicated and by which cost can be suppressed, by forming a thin film transistor using an …

An electronic device includes a Substrate, a functional ele ment formed on the Substrate, an
electrolytic element pro vided on at least one of a side of the substrate on which the …

To provide a semiconductor device in which a defect or fault is not generated and a
manufacturing method thereof even if a ZnO semiconductor film is used and a ZnO film to …

An object of the present invention is to provide an amorphous oxide for use in the active
layer of a semicon ductor device such as a thin film transistor (TFT) and serving as a …

The present invention provides a? eld-effect tran sistor including a light-shielding structure
and provides a display provided With the transistor.[0014] A? eld-effect transistor according …