This paper presents a comprehensive review of the reliability issues hampering capacitive
RF MEMS switches in their development toward commercialization. Dielectric charging and …

The main challenge in the commercialization of the RF-MEMS switches is their reliability,
related to both the electrical and mechanical domains. The development of test standards …

This article reports high-performance and reliable phase change material (PCM) germanium
telluride (GeTe)-based nonvolatile radio frequency (RF) switches. The highly miniaturized …

This paper presents the characterization, optimization, and fabrication of phase change
material (PCM) germanium telluride (GeTe) based RF switches investigating the materials' …

This paper gives a new insight into the problem of the irreversible stiction of RF
microelectromechanical systems (MEMS) attributed to the dielectric charging. We present a …

This article presents an approach to monolithically implement radio-frequency (RF) phase
change material (PCM) germanium telluride (GeTe) T-type switch as a switching unit cell for …

After decades of improving semiconductor-device reliability, dielectric failure rates resulting
from surface-charge accumulation, dielectric breakdown, and charge injection have been …

In this paper, we have proposed, fabricated and characterized piezoelectrically actuated RF
MEMS (radio-frequency micro-electro-mechanical system) switches. They have been …

This paper presents results on high lifetime RF microelectromechanical (RF-MEMS)
dielectricless capacitive switches. Using air gap variation only, these RF MEMS capacitive …

In this paper, we develop a physics-based theoretical modeling framework to predict the
device lifetime defined by the dominant degradation mechanisms of RF …