The current status and trends of 1,200-V commercial silicon-carbide MOSFETs: Deep physical analysis of power transistors from a designer's perspective
AO Adan, D Tanaka, L Burgyan… - IEEE Power Electronics …, 2019 - ieeexplore.ieee.org
There is continuous activity to increase the efficiency and reduce the size of power electronic
systems and modules developed for transportation and automotive electrification …
systems and modules developed for transportation and automotive electrification …
A review of power electronic devices for heavy goods vehicles electrification: Performance and reliability
This review explores the performance and reliability of power semiconductor devices
required to enable the electrification of heavy goods vehicles (HGVs). HGV electrification …
required to enable the electrification of heavy goods vehicles (HGVs). HGV electrification …
SiC power MOSFETs performance, robustness and technology maturity
Abstract Relatively recently, SiC power MOSFETs have transitioned from being a research
exercise to becoming an industrial reality. The potential benefits that can be drawn from this …
exercise to becoming an industrial reality. The potential benefits that can be drawn from this …
A short-circuit safe operation area identification criterion for SiC MOSFET power modules
This paper proposes a new method for the investigation of the short-circuit safe operation
area (SCSOA) of state-of-the-art SiC MOSFET power modules rated at 1.2 kV based on the …
area (SCSOA) of state-of-the-art SiC MOSFET power modules rated at 1.2 kV based on the …
A temperature-dependent SPICE model of SiC power MOSFETs for within and out-of-SOA simulations
This paper presents a temperature-dependent SPICE model for SiC power MOSFETs. The
model describes the static and dynamic behavior and accounts for leakage current and …
model describes the static and dynamic behavior and accounts for leakage current and …
Degradation of SiC MOSFETs under high-bias switching events
Evaluating the robustness of power semiconductor devices is key for their adoption into
power electronics applications. Recent static acceleration tests have revealed that SiC metal …
power electronics applications. Recent static acceleration tests have revealed that SiC metal …
Investigations on the degradation of 1.2-kV 4H-SiC MOSFETs under repetitive short-circuit tests
X Zhou, H Su, Y Wang, R Yue, G Dai… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
The long-term operational reliability of silicon carbide (SiC) MOSFETs needs to be further
verified before they could replace silicon counterparts in power applications. In this paper …
verified before they could replace silicon counterparts in power applications. In this paper …
Short-circuit degradation of 10-kV 10-A SiC MOSFET
The short-circuit behavior of power devices is highly relevant for converter design and fault
protection. In this paper, the degradation during short circuit of a 10-kV 10-A 4H-SiC …
protection. In this paper, the degradation during short circuit of a 10-kV 10-A 4H-SiC …
Comparison and analysis of short circuit capability of 1200V single-chip SiC MOSFET and Si IGBT
Short circuit capability of commercial SiC MOSFETs is analyzed, which is compared with that
of commercial Si IGBTs. Junction temperatures during short circuit tests are analyzed in this …
of commercial Si IGBTs. Junction temperatures during short circuit tests are analyzed in this …
Comparison of short circuit failure modes in sic planar mosfets, sic trench mosfets and sic cascode jfets
In this paper, a comprehensive comparative analysis is performed on the short circuit (SC)
withstand time and failure modes between a 650 V SiC Planar MOSFET, a 650 V SiC Trench …
withstand time and failure modes between a 650 V SiC Planar MOSFET, a 650 V SiC Trench …